Nobuyoshi Koshida

Bio: Nobuyoshi Koshida is an academic researcher from Tokyo University of Agriculture and Technology. The author has contributed to research in topics: Porous silicon & Silicon. The author has an hindex of 33, co-authored 366 publications receiving 6199 citations. Previous affiliations of Nobuyoshi Koshida include University of Graz & Hewlett-Packard.

Visible electroluminescence from porous silicon

Abstract: It is demonstrated that photoluminescent porous Si (PS) layers exhibit definitely visible electroluminescence (EL). The PS layers were formed by anodization of single‐crystal nondegenerate p‐type Si wafers in an HF solution. The experimental EL cells are of the form semitransparent metal/PS layer/p‐type Si/Al electrode. These cells show a rectifying junction behavior. When the forward current density reaches a certain value, stable visible (orange) light is uniformly emitted through a semitransparent electrode. A possible explanation of this is the radiative transition due to electron and hole injection into quantized states in PS.

Thermally induced ultrasonic emission from porous silicon

Abstract: The most common mechanism1 for generating ultrasound in air is via a piezoelectric transducer, whereby an electrical signal is converted directly into a mechanical vibration. But the acoustic pressure so generated is usually limited to less than 10 Pa, the frequency bandwidth of most piezoelectric ceramics is narrow, and it is difficult to assemble such transducers into a fine-scale phase array with no crosstalk2,3. An alternative strategy using micromachined electrostatic diaphragms is showing some promise4,5, but the high voltages required and the mechanical weakness of the diaphragms may prove problematic for applications. Here we show that simple heat conduction from porous silicon to air results in high-intensity ultrasound without the need for any mechanical vibrational system. Our non-optimized device generates an acoustic pressure of 0.1 Pa at a power consumption of 1 W cm−2, and exhibits a flat frequency response up to at least 100 kHz. We expect that substantial improvements in efficiency should be possible. Moreover, as this material lends itself to integration with conventional electronic circuitry, it should be relatively straightforward to develop finely structured phase arrays of these devices, which would give control over the wavefront of the acoustic emissions.

Efficient Visible Photoluminescence from Porous Silicon

Abstract: It is shown that UV-excited porous Si (PS) exhibits an efficient visible photoluminescence (PL) at room temperature. The PS layers were formed by anodization of p-type and n-type single-crystal Si wafers in aqueous HF solutions. The peak wavelength of PL spectra depends on the anodization parameters including the resistivity and the conduction type of Si substrates. The PL spectra can be tuned to a higher energy side by either adjustment of the anodizing conditions or chemical etching after anodization. These remarkable results can be interpreted as a result of quantum size effects in PS.

Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode

Abstract: Highly efficient electroluminescence (EL) is obtained at low operating voltage (<5 V) from n+-type silicon-electrochemically oxidized thin porous silicon–indium–tin–oxide junctions. Continuous wave external quantum efficiency greater than 1% and power efficiency of 0.37% have been achieved. Considerable reduction of leakage current accounts for the enhancement of EL efficiency upon oxidation. The EL time response (≈30 μs) is slower than the photoluminescence one, due to slow electrical charging of porous silicon. No degradation of quantum efficiency is observed during operation and upon aging. This is attributed to the electrochemically grown oxide, which should provide a better surface passivation than the initial hydrogen coverage.

Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing

Abstract: The effects of a treatment based on high-pressure water vapor annealing (HWA) on nanocrystalline porous silicon have been investigated in terms of the photoluminescence (PL) efficiency and stability. For originally nonluminescent samples with a relatively low porosity, the treatment produces highly efficient and stable luminescent nanocrystalline-Si (nc-Si) layers without affecting the emission wavelength. Under appropriate conditions of pressure (2.6 MPa) and temperature (260 °C), the PL external quantum efficiency reaches 23% at room temperature. Electron-spin-resonance and infrared absorption analyses show that the HWA treatment promotes surface oxidation of nc-Si under a minimized mechanical stress and consequently generates sufficiently passivated nc-Si∕SiO2 interfaces with an extremely low nonradiative defect density. This causes a drastic enhancement in the PL efficiency associated with a strong localization of excitons in nc-Si. As a practical approach, the HWA technique is very useful for fabrica...

The structural and luminescence properties of porous silicon

Abstract: A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.

Electrically pumped hybrid AlGaInAs-silicon evanescent laser

Abstract: An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.