O
Oana D. Jurchescu
Researcher at Wake Forest University
Publications - 131
Citations - 7808
Oana D. Jurchescu is an academic researcher from Wake Forest University. The author has contributed to research in topics: Organic semiconductor & Thin-film transistor. The author has an hindex of 40, co-authored 118 publications receiving 6743 citations. Previous affiliations of Oana D. Jurchescu include University of Utah & University of Kentucky.
Papers
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Journal ArticleDOI
Effect of impurities on the mobility of single crystal pentacene
TL;DR: In this article, the hole mobility for the organic conductor pentacene was obtained at room temperature and at 225 K. The number of traps was reduced by two orders of magnitude compared with conventional methods.
Journal ArticleDOI
The effect of impurities on the mobility of single crystal pentacene
TL;DR: In this paper, a hole mobility for the organic conductor pentacene of 35 cm2/Vs at room temperature increasing to 58 cm2 /Vs at 225k was obtained.
Journal ArticleDOI
Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits.
David J. Gundlach,James E. Royer,Sung Kyu Park,Sankar Subramanian,Oana D. Jurchescu,Oana D. Jurchescu,Behrang H. Hamadani,Andrew J. Moad,Regis J. Kline,Lucile C. Teague,Oleg A. Kirillov,Curt A. Richter,James G. Kushmerick,Lee J. Richter,Sean Parkin,Thomas N. Jackson,John E. Anthony +16 more
TL;DR: By connecting device fabrication to molecular design, it is demonstrated that rapid film processing under ambient room conditions and high performance are not mutually exclusive.
Journal ArticleDOI
Mobility overestimation due to gated contacts in organic field-effect transistors
Emily G. Bittle,James I. Basham,James I. Basham,Thomas N. Jackson,Oana D. Jurchescu,David J. Gundlach +5 more
TL;DR: This work reports on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on, and disentangle the channel properties from the contact resistance by using impedance spectroscopy and shows that the current in such devices is governed by a gate bias dependence of theContact resistance.
Journal ArticleDOI
Charge-transfer complexes: new perspectives on an old class of compounds
Katelyn P. Goetz,Derek Vermeulen,Margaret E. Payne,Christian Kloc,Laurie E. McNeil,Oana D. Jurchescu +5 more
TL;DR: In this paper, the growth, structure and properties of charge-transfer complexes are reviewed and underlined recent progress in their application in organic devices, as well as the challenges to understand the fundamental parameters governing their operation.