O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Electrical and structural properties of AlGaN: A comparison with CVD diamond
TL;DR: In this article, the present state of the AlGaN system is discussed in comparison to the known properties of CVD diamond, growth and structural features of thin films as well as heterostructures are described.
Journal ArticleDOI
(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
Stephan Maroldt,Rudiger Quay,Philippe Dennler,Dirk Schwantuschke,M. Musser,Michael Dammann,Rolf Aidam,Patrick Waltereit,Axel Tessmann,Oliver Ambacher +9 more
TL;DR: In this paper, the suitability of the AlGaN/GaN heterostructure for applications up to 20 GHz is demonstrated based on a technically mature process and a broadband power amplifier integrated circuit is designed and fabricated in order to monitor the technology performance.
Journal ArticleDOI
Temperature Cross-Sensitivity of AlN-Based Flexural Plate Wave Sensors
TL;DR: In this article, the temperature cross-sensitivity of aluminum nitride (AlN)-based flexural plate wave devices for sensing applications in contact with liquids was investigated, where the interdigital transducers are designed as a buried electrode, and thus, are electrically shielded, enabling full immersion of the sensor into the liquid.
Journal ArticleDOI
GCPW GaAs Broadside Couplers at H-Band and Application to Balanced Power Amplifiers
TL;DR: In this paper, a broadside hybrid coupler based on a three-metallization layer process and a grounded coplanar waveguide environment is reported, which exhibits insertion losses of 3.8-4.3 dB in the through and coupled ports from 246 to 297 GHz.
Proceedings ArticleDOI
High linearity active GaN-HEMT down-converter MMIC for E-band radar applications
Ingmar Kallfass,Gulesin Eren,Rainer Weber,Sandrine Wagner,Dirk Schwantuschke,Rudiger Quay,Oliver Ambacher +6 more
TL;DR: In this paper, a down-converter MMIC in 100 nm gate length AlGaN/GaN HEMT technology achieves an input-related 1dB compression point of 13 dBm at a center frequency of 77 GHz, providing high linearity for radar applications.