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Oliver Ambacher

Researcher at Fraunhofer Society

Publications -  862
Citations -  29006

Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.

Papers
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Journal ArticleDOI

Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Philipp Doering, +9 more
- 01 Feb 2021 - 
Proceedings ArticleDOI

Advanced building blocks for (Sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology

Michael Schlechtweg, +12 more
TL;DR: In this article, a millimeter and submillimeter-wave integrated circuits (MMICs and S-MMIC) and modules developed at the Fraunhofer IAF for manifold applications in the frequency range up to 700 GHz are presented.
Journal ArticleDOI

Nanoscale Hexagonal Gallium Nitride from Single Molecule Precursors: Microstructure and Crystallite Size Dependent Photoluminescence

A. C. Frank, +5 more
- 01 Jan 1998 - 
TL;DR: In this paper, phase-pure hexagonal gallium nitride crystallites were synthesized by using the thermally induced explosion of the molecular precursor (Et 3 N)Ga(N 3 ) 3.
Proceedings Article

Individual source vias for GaN HEMT power bars

M. Musser, +6 more
TL;DR: In this paper, an ISV layout based on individual source vias (ISV) is introduced and investigated for GaN HEMT power bar transistors and the influence of the source inductance on the gain parameters as well as on the stability is shown.
Journal ArticleDOI

Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications

Rolf Aidam, +5 more
- 01 Dec 2014 - 
TL;DR: In this article, a detailed analysis and a deduced model of the interface growth is presented, where the Al/N ratio during AlN spacer growth is likely to influence the subsequent growth of quaternary Al(Ga)InN.