O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Characterization of GaN‐based lateral polarity heterostructures
Pierre Lorenz,Vadim Lebedev,F. Niebelschütz,S. Hauguth,Oliver Ambacher,Juergen A. Schaefer,Stefan Krischok +6 more
TL;DR: In this paper, the GaN-based lateral polarity heterostructures (LPH) were grown on sapphire substrates using molecular beam epitaxy and characterized using surface sensitive techniques.
Proceedings ArticleDOI
Resonant Piezoelectric ALGaN/GaN MEMS Sensors in Longitudinal Mode Operation
K. Brueckner,F. Niebelschuetz,Katja Tonisch,Ralf Stephan,Volker Cimalla,Oliver Ambacher,Matthias Hein +6 more
TL;DR: In this paper, a free-standing piezoelectric AlGaN/GaN beam resonator has been prepared on silicon substrates using a semiconductor fabrication process.
Journal ArticleDOI
Growth and characterization of InAlN layers nearly lattice-matched to GaN
José Manuel,Francisco M. Morales,Juan G. Lozano,Rafael García,T. Lim,Lutz Kirste,Rolf Aidam,Oliver Ambacher +7 more
TL;DR: A set of InxAl1-xN films lattice-matched to GaN/sapphire substrates were grown by molecular beam epitaxy (MBE) and studied using X-ray diffraction and transmission electron microscopy with the aim of implementing barrier and channels in high electron mobility transistors (HEMTs) as mentioned in this paper.
Proceedings ArticleDOI
A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses
Michael Basler,Stefan Moench,Richard Reiner,Patrick Waltereit,Rudiger Quay,Ingmar Kallfass,Oliver Ambacher +6 more
TL;DR: This work presents an approach of a normally-off gate driver with reduced static losses based on a n-channel GaN-on-Si technology, which compensates the lack of complementary transistors by complementary logic signals.
Journal ArticleDOI
Thermoresistive and piezoresistive properties of wurtzite N-GaN
S. Mingiacchi,Paolo Lugli,Annalisa Bonfiglio,Gennaro Conte,Martin Eickhoff,Oliver Ambacher,A. Rizzi,Adriana Passaseo,Paolo Visconti,R. Cingolani +9 more
TL;DR: In this paper, the authors analyzed the I(V) characteristics as a function of temperature and found a temperature coefficient of resistance (TCR = a) of the same order of magnitude (a few percent per °C) as commercial thermistors, with a peak value of 19%/°C.