O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
More filters
Journal ArticleDOI
High electron mobility AlGaN/GaN heterostructure on (111) Si
TL;DR: In this paper, room-temperature Hall mobilities exceeding 900 cm2/V were obtained for AlGaN/GaN heterostructures on (111) Si by singletemperature flow modulation organometallic vapor phase epitaxy.
Journal ArticleDOI
Detonations of Gallium Azides: A Simple Route to Hexagonal GaN Nanocrystals
A. C. Frank,Frank Stowasser,Harald Sussek,Hans Pritzkow,C. R. Miskys,Oliver Ambacher,Michael Giersig,Roland A. Fischer +7 more
Proceedings ArticleDOI
100 Gbit/s wireless link with mm-wave photonics
S. Koenig,F. Boes,D. Lopez-Diaz,J. Antes,R. Henneberger,Rene Schmogrow,David Hillerkuss,Robert Palmer,Thomas Zwick,Christian Koos,Wolfgang Freude,Oliver Ambacher,Ingmar Kallfass,Juerg Leuthold +13 more
TL;DR: A single-input single-output photonic wireless link at 237.5 GHz with record 100 Gbit/s data transmission over 20 m with state-of-the-art active I/Q-MMIC at the receiver is demonstrated.
Journal ArticleDOI
Pt/GaN schottky diodes for hydrogen gas sensors
Muhammad Ali,V. Cimalla,Vadim Lebedev,Henry Romanus,Vinayak Tilak,D. Merfeld,Peter Micah Sandvik,Oliver Ambacher +7 more
TL;DR: In this article, the performance of Schottky diodes with different thickness of the catalytic metal was investigated as hydrogen gas detectors and the sensitivity to hydrogen gas was investigated in dependence on the active area, the Pt thickness and the operating temperature for 1 vol.% hydrogen in synthetic air.
Journal ArticleDOI
Structural and optical properties of Si-doped GaN
TL;DR: In this article, the structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction (XRD), atomic force microscopy, photoluminescence, photothermal deflection spectroscopy, and optical transmission measurements.