O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
InP DHBT-based 1:2 DEMUX IC operating at up to 120 Gbit/s
TL;DR: A 1:2 demultiplexer (DEMUX) circuit has been successfully designed and manufactured using high-speed InP/InGaAs DHBT technology and features proper operation at data rates up to 120 Gbit/s.
Journal ArticleDOI
Dynamic characterization of thin aluminum nitride microstructures
Fabian Knöbber,Fabian Knöbber,O. Bludau,C.-C. Röhlig,C.-C. Röhlig,R. E. Sah,Oliver A. Williams,Lutz Kirste,Steffen Leopold,Daniel Pätz,Volker Cimalla,Oliver Ambacher,Oliver Ambacher,Vadim Lebedev +13 more
TL;DR: In this paper, the mechanical and material properties of AlN and nanodiamond membranes for the use in tunable micro-optics were investigated in dynamic mode by laser Doppler vibrometry.
Journal ArticleDOI
Nanodiamond resonators fabricated on 8″ Si substrates using adhesive wafer bonding
Vadim Lebedev,T Lisec,Taro Yoshikawa,Markus Reusch,D. Iankov,Christian Giese,Agnė Žukauskaitė,Volker Cimalla,Oliver Ambacher +8 more
TL;DR: In this article, the adhesive wafer bonding of diamond thin films onto 8'' silicon substrates is reported, and vibrometry and interferometry studies of micro-fabricated flexural beam and disk resonators are carried out.
Proceedings Article
Highly integrated switching calibration front-end MMIC with active loads for w-band radiometers
TL;DR: A millimeter-wave monolithic integrated circuit (MMIC) consisting of a W-band (75-100 GHz) single-pole-five-throw (SP5T) switch and multiple internal active and passive loads for radiometer calibration was designed and manufactured in a low noise 50 nm GaAs mHEMT technology as mentioned in this paper.
Journal ArticleDOI
Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy
C. Buchheim,Rüdiger Goldhahn,A. T. Winzer,Christoph Cobet,M. Rakel,Norbert Esser,Uwe Rossow,D. Fuhrmann,Andreas Hangleiter,Oliver Ambacher +9 more
TL;DR: In this paper, the ground state transition energies of AlN/GaN superlattices were determined by photoreflectance spectroscopy and spectroscopic ellipsometry.