Oliver Ambacher

TL;DR: In this paper, a method of separating two layers of material from one another in such a way that the two separated layers are essentially fully preserved is proposed. But the method is not suitable for the case where the electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interfaces.

TL;DR: Optical gain processes in thin GaN and AlGaN are compared by means of gain spectroscopy using the stripe length method and high-excitation photoluminescence, both performed at various densities and temperatures as discussed by the authors.

TL;DR: In this article , high-temperature AlN (deposited at 1130 [Formula: see text]C) was grown on low temperature AlN nucleation layers with different V/III ratios and reactor pressures by metalorganic chemical vapor deposition.

TL;DR: In this paper, a Si-substrate removal technique for AlGaN/GaN devices on PCB carriers is described and experimentally applied to PCB-embedded ALGaN and GaN-on-Si devices, showing an increase of off-state voltage from 600 V to 1400 V for devices after Si-removal.

TL;DR: In this paper, a defect resonance at g=1.96 and 2.00 was observed in double-heterostrucrure gallium nitride light emitting diodes, corresponding to the effective mass donor and a deep defect.