O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
More filters
Journal ArticleDOI
Manipulation of the In Situ Nitrogen‐Vacancy Doping Efficiency in CVD‐Grown Diamond
Julia Langer,V. Cimalla,Vadim Lebedev,Lutz Kirste,Mario Prescher,Ting Luo,Jan Jeske,Oliver Ambacher +7 more
TL;DR: In this article , the in situ generation of nitrogen-vacancy (NV) centers in diamond during chemical vapor deposition (CVD) is investigated depending on the electric field strength at the sample position.
Journal ArticleDOI
Technology of GaN-Based Large Area CAVETs With Co-Integrated HEMTs
Philipp Doring,Rachid Driad,Richard Reiner,Patrick Waltereit,Stefano Leone,Michael Mikulla,Oliver Ambacher +6 more
TL;DR: In this paper, a multi-finger current aperture vertical electron transistors (CAVETs) are fabricated with co-integrated high electron mobility transistors, which are realized by Mg-ion implantation and metalorganic chemical vapor deposition (MOCVD) regrowth.
Journal ArticleDOI
Metal organic chemical vapour deposition regrown large area GaN-on-GaN current aperture vertical electron transistors with high current capability
Philipp Doering,Rachid Driad,Richard Reiner,Patrick Waltereit,Michael Mikulla,Oliver Ambacher,Oliver Ambacher +6 more
Journal ArticleDOI
Preparation of Epitaxial Templates for Molecular Beam Epitaxy of III-Nitrides on Silicon Substrates
TL;DR: In this article, three different methods of composite substrate preparation for epitaxial growth of III-nitride epilayers are described: molecular beam epitaxy (MBE), chemical vapor deposition and MBE carbonization.
Journal ArticleDOI
Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
Francisco M. Morales,Charbel Zgheib,Sergio I. Molina,Daniel Araujo,Rafael García,C. Fernández,A. Sanz-Hervás,Pierre Masri,Petia Weih,Thomas Stauden,Oliver Ambacher,Jörg Pezoldt +11 more
TL;DR: In this paper, a structural study of SiC layers grown by molecular beam epitaxy on carbonized Si(111) substrates with Ge modified interfaces is reported, where different quantities of Ge were predeposited prior to the SiC growth for comparison.