O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar
Axel Tessmann,Ingmar Kallfass,Arnulf Leuther,Hermann Massler,M. Kuri,M. Riessle,M. Zink,Rainer Sommer,Alfred Wahlen,Helmut Essen,Volker Hurm,Michael Schlechtweg,Oliver Ambacher +12 more
TL;DR: The development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz have been presented.
Journal ArticleDOI
Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films
Yuan Lu,Markus Reusch,Nicolas Kurz,Anli Ding,Tim Christoph,Mario Prescher,Lutz Kirste,Oliver Ambacher,Agnė Žukauskaitė +8 more
TL;DR: In this article, the biaxial elastic modulus and the in-plane coefficient of thermal expansion (CTE) as a function of Sc concentration were determined by thermal cycling method.
Journal ArticleDOI
Determination of the composition of InxGa1−xN from strain measurements
Francisco M. Morales,David González,Juan G. Lozano,Rafael García,S. Hauguth-Frank,Vadim Lebedev,Volker Cimalla,Oliver Ambacher +7 more
TL;DR: In this paper, a general equation to extract x from experimentally determined a and c cell parameters in biaxial strained wurtzite In x Ga 1− x N is proposed.
Proceedings ArticleDOI
Metamorphic HEMT technology for low-noise applications
Arnulf Leuther,Axel Tessmann,Ingmar Kallfass,R. Losch,Matthias Seelmann-Eggebert,Niklas Wadefalk,F. Schafer,J. D. Gallego Puyol,Michael Schlechtweg,Michael Mikulla,Oliver Ambacher +10 more
TL;DR: In this article, state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented.
Journal ArticleDOI
Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN
Debdeep Jena,Sten Heikman,James S. Speck,Arthur C. Gossard,Umesh K. Mishra,A. Link,Oliver Ambacher +6 more
TL;DR: Shubnikov-de-Haas oscillation was observed in a polarization-doped three-dimensional electron slab in a graded semiconductor layer in this paper, where the electron slab was generated by the technique of grading the polar semiconductor alloy with spatially changing polarization.