O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency
Jutta Kuhn,Friedbert van Raay,Rudiger Quay,Rudolf Kiefer,Michael Mikulla,Matthias Seelmann-Eggebert,Wolfgang Bronner,Michael Schlechtweg,Oliver Ambacher,Manfred Thumm +9 more
TL;DR: In this paper, a dual-stage X-band high-power and highly-efficient monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) is presented.
Journal ArticleDOI
Detonations of Gallium Azides: A Simple Route to Hexagonal GaN Nanocrystals.
A. C. Frank,Frank Stowasser,Harald Sussek,Hans Pritzkow,C. R. Miskys,Oliver Ambacher,Michael Giersig,Roland A. Fischer +7 more
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Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis
TL;DR: In this paper, the thickness of the altered layer created by ion bombardment of the 6H-SiC single crystal was determined by means of Auger electron spectroscopy (AES) depth profiling in conjunction with factor analysis.
Proceedings ArticleDOI
A GaN-Based Active Diode Circuit for Low-Loss Rectification
Michael Basler,Richard Reiner,Stefan Moench,Patrick Waltereit,Rudiger Quay,Ingmar Kallfass,Oliver Ambacher +6 more
TL;DR: In this paper, a new approach of an active diode circuit was investigated in a high-voltage GaN-on-Si technology with p-GaN gate module.
Proceedings ArticleDOI
Millimeter-wave monolithic integrated circuits for imaging and remote sensing at 140, 200, and 300 GHz
Ingmar Kallfass,Axel Tessmann,Arnulf Leuther,Hermann Massler,Michael Schlechtweg,Oliver Ambacher +5 more
TL;DR: This work discusses low-noise amplifiers up to 300 GHz, frequency multipliers and mixers operating up to300 GHz, a power amplifier MMIC achieving more than 11 dBm of output power at 140 GHz, and a 200 GHz multi-functional, heterodyne receiver MMIC driven by a subharmonic local oscillator signal with low power requirements.