O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
More filters
Journal ArticleDOI
Absorption and crystallinity of poly(3-hexylthiophene)/fullerene blends in dependence on annealing temperature
Tobias Erb,Uladzimir Zhokhavets,Harald Hoppe,Gerhard Gobsch,Maher Al-Ibrahim,Oliver Ambacher +5 more
TL;DR: In this paper, the influence of the annealing temperature on film crystallinity and on optical absorption was studied, and it was shown that increased crystallinity leads to an increased optical absorption.
Journal ArticleDOI
Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures
P. J. Schuck,Michael Mason,Robert D. Grober,Oliver Ambacher,A. P. Lima,C. R. Miskys,Roman Dimitrov,Martin Stutzmann +7 more
TL;DR: In this article, the inversion domain boundaries (IDBs) of lateral polarity heterostructures have been spectroscopically imaged at low temperature using high spatial resolution photoluminescence and it is shown that the IDBs are not only optically active, but are more than an order of magnitude brighter than the GaN bulk material.
Journal ArticleDOI
Triazidogallium and derivatives : new precursors to thin films and nanoparticles of gan
Roland A. Fischer,Alexander Miehr,Eberhard Herdtweck,Michael R. Mattner,Oliver Ambacher,Thomas Metzger,E. Born,Sevil Weinkauf,Colin R. Pulham,Simon Parsons +9 more
TL;DR: In this paper, the synthesis and properties of [Ga(N3)3]∞ (1) and the related derivatives [(Do)nGa(n3) 3] (2a-d): Do = THF, NEt3, NMe3, quinuclidine, n = 1; 2e: Do = pyridine; n = 3), Li[(CH3)Ga(1)3], [Cp(CO)2-Fe-Ga(2)3NMe2}] (4), [C
Journal ArticleDOI
Detailed analysis of the dielectric function for wurtzite InN and In‐rich InAlN alloys
Rüdiger Goldhahn,P. Schley,A. T. Winzer,Gerhard Gobsch,V. Cimalla,Oliver Ambacher,M. Rakel,Christoph Cobet,Norbert Esser,Hai Lu,William J. Schaff +10 more
TL;DR: A detailed analysis of the dielectric function for wurtzite InN as well as for In-rich InAIN alloys is presented in this article, covering the energy range from 0.72 up to 9.5 eV, were obtained by ellipsometric studies of an (1120) a-plane InN film and low carrier density (0001) c-plane films.
Journal ArticleDOI
Negative electron affinity of cesiated p-GaN(0001) surfaces
TL;DR: In this paper, the adsorption of cesium on clean n- and p-GaN(0001)-1×1 surfaces at 150 K was investigated using x-ray photoemission spectroscopy, photo-emission spectrum analysis with monochromatized He I radiation ultraviolet photoelectron spectra, and a Kelvin probe (contact potential difference, CPD).