Oliver Ambacher

TL;DR: In this paper, the authors studied the Raman spectra of AlxGa1−xN layers grown by molecular beam epitaxy on sapphire substrates and determined the energy of the optical modes and the broadening of Raman peaks as a function of aluminum content.

TL;DR: In this paper, the structural properties at the interface and in the epilayer as well as the electronic properties suitable for a high electron mobility transistor (HEMT) were analyzed and compared with systems grown on Al2O3(0001).

TL;DR: By combining a low damage chlorine based gate-recess etching and a sophisticated technology for AlGaN/GaN depletion-mode high electron mobility transistors (HEMTs), this article fabricated high performance recessed enhancement-mode HEMTs.

TL;DR: In this article, all electroacoustic material parameters, i.e., the elastic, piezoelectric, and dielectric coefficients, as well as the mass density, were determined experimentally for wurtzite aluminum scandium nitride (Al 1 − xSc xN) for a wide range of Sc concentrations of up to x = 0.32 from the same material source for the first time.

TL;DR: In this paper, a (11 2 0 ) a -plane InN film grown by molecular beam epitaxy on ( 1 1 02 ) r -plane sapphire substrate with an AlN nucleation layer and a GaN buffer was studied by spectroscopic ellipsometry.