Oliver Ambacher

TL;DR: In this paper, an UHVCVD method was developed which allowed the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C.

TL;DR: In this paper, the structural, elastic, dielectric, and piezoelectric properties of scandium aluminum nitride (ScxAl1−xN) with the wurtzite crystal structure were investigated by means of first-principles calculations based on density functional theory in order to enable a detailed comparison to the corresponding physical properties of GaAlN and InAlN.

TL;DR: In this article, the authors showed that at low temperatures below 1000 °C the Kirkendall effect during the alloying of aluminium and the catalyst resulted in the formation of three-dimensional nanostructures like lamellas and nano flowers.

TL;DR: In this article, an active frequency-doubler MMIC achieving an output frequency of 300 GHz and its monolithic integration with a 300GHz resistive mixer is presented, which provides a broadband source with an average output power of −9.5 dBm and better than 10 % conversion efficiency in the frequency range from 250 to 310 GHz.