Oliver Ambacher

TL;DR: In this article, a non-polar a-plane Al0.77Sc0.23N 11 2 ¯ 0 thin films were prepared by magnetron sputter epitaxy on rplane Al2O3 (1 1¯ 02 ) substrates.

TL;DR: In this article, the authors compared the dielectric failure by forward-biased constant-current stress and statistical Weibull analysis and showed the influence of the current density through the gate on the charge-to-breakdown characteristics.

TL;DR: In this paper, the authors investigated the influence of the AlN material quality on the etching rate in KOH-based solutions and showed that high quality MBE-AlN could be etch anisotropic with a preferred lateral component in [110] direction at 60 °C while the polycrystalline AlN layers were etched isotropic and homogenously already at room temperature.

TL;DR: In this paper, the authors examined the bound charge present when the III-nitride alloys, AlGaN, InGaN and AlInN, are pseudomorphically grown on templates of relaxed GaN and InN epitaxial layers.

TL;DR: In this article, the authors report on recent results from their GaN transistor and circuit technology, which is characterized by state-of-theart performance, good uniformity and high yield as well as excellent long-term stability.