O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Coalescence aspects of III-nitride epitaxy
Vadim Lebedev,Katja Tonisch,F. Niebelschütz,V. Cimalla,D. Cengher,I. Cimalla,Ch. Mauder,S. Hauguth,Oliver Ambacher,Francisco M. Morales,Juan G. Lozano,David González +11 more
TL;DR: In this article, a growth model was proposed to explain the formation of domain boundaries and stacking faults formed during the coalescence of wurtzite-III-nitride epitaxy, and it was shown that two adjacent and tilted, hexagonal-shaped 2H domains may form a noncoherent boundary explicitly along a polygonal plane.
Journal ArticleDOI
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Stefano Leone,Roberto Fornari,Matteo Bosi,Vincenzo Montedoro,Lutz Kirste,Philipp Doering,Fouad Benkhelifa,Mario Prescher,Christian Manz,Vladimir Polyakov,Oliver Ambacher,Oliver Ambacher +11 more
TL;DR: In this article, the authors explored the possibility of using e-Ga2O3 templates, deposited by metalorganic chemical vapor deposition on sapphire substrates, in order to reduce the lattice mismatch of GaNs with sappires.
Proceedings Article
A 100 GHz FMCW MIMO radar system for 3D image reconstruction
D. Bleh,Markus Rosch,M. Kuri,Alexander Dyck,Axel Tessmann,Arnulf Leuther,Sandrine Wagner,Oliver Ambacher +7 more
TL;DR: A frequency modulated continuous wave (FMCW) multiple input multiple output (MIMO) radar demonstrator system operating in the W-band at frequencies around 100 GHz consists of a two dimensional sparse array together with hardware for signal generation and image reconstruction that is described in more detail.
Proceedings ArticleDOI
Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
Beatrix Weiss,Richard Reiner,Patrick Waltereit,Rudiger Quay,Oliver Ambacher,Alihosein Sepahvand,Dragan Maksimovic +6 more
TL;DR: In this paper, the authors present switching operation of a monolithically integrated half-bridge stage in a 600 V-class GaN-on-Si technology, which includes two high performance GaN HEMTs with integrated freewheeling Schottky diodes, on a total chip area of 4×4 mm2.
Journal ArticleDOI
Processing of novel SiC and group III-nitride based micro- and nanomechanical devices
Ch. Foerster,V. Cimalla,K. Brueckner,Vadim Lebedev,Ralf Stephan,Matthias Hein,Oliver Ambacher +6 more
TL;DR: In this article, the authors used a magneto motive actuation and a thin conductive metal layer on top of the resonator to realize the detection of 3C-SiC and AlN-resonator beams with resonant frequencies between 20 kHz and 5 MHz.