O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation
Bjorn Albrecht,Susanne Kopta,Oliver John,Martin Rutters,Michael Kunzer,Rachid Driad,Norman Marenco,Klaus Köhler,Martin Walther,Oliver Ambacher +9 more
TL;DR: Improved aluminum-gallium-nitride p-i-n photodetectors with different active regions are reported, designed for the measurement of UV-A (315 to 380 nm), UV-B (280 to 315 nm), and UV-C (<; 280 nm) radiation as mentioned in this paper.
Journal ArticleDOI
Novel single source precursors for MOCVD of AlN, GaN and InN☆
TL;DR: In this paper, the MOCVD of AlN, GaN, and InN thin films using single source precursors (N 3 ) 2 Ga[(CH 2 ) 3 NMe 2 ] (1), ( N 3 )In[( CH 2 )3 NMe2 ] 2 (2), (N3 )Al[ (CH 2 ), 3 NME 2 ] 2(3), and (N 2 )AlMe 2 (H 2 N t Bu) (4) is reported.
Journal ArticleDOI
Momentum matrix element and conduction band nonparabolicity in wurtzite GaN
TL;DR: In this article, the imaginary part of the dielectric function of wurtzite GaN measured by spectroscopic ellipsometry at room temperature with calculations was compared with calculations.
Journal ArticleDOI
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
Gema Martínez-Criado,Ana Cros,Andrés Cantarero,Roman Dimitrov,Oliver Ambacher,Martin Stutzmann +5 more
TL;DR: In this article, the surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied, and the interface region between these defects and the surrounding wurtzite GaN could be responsible for PL lines.
Proceedings ArticleDOI
Watt-level non-uniform distributed 6–37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology
TL;DR: The MMIC as mentioned in this paper is based on a 100nm AlGaN/GaN T-gate HEMT microstrip transmission line technology with an f T > 80 GHz.