O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Proceedings ArticleDOI
Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology
Fabian Thome,Hermann Massler,Sandrine Wagner,Arnulf Leuther,Ingmar Kallfass,Michael Schlechtweg,Oliver Ambacher +6 more
TL;DR: In this paper, two millimeter-wave monolithic integrated circuit (MMIC) low-noise amplifiers (LNA), operating in the frequency range between 58 and 110 GHz and 74 and 110GHz, respectively, are presented.
Proceedings ArticleDOI
A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
Ingmar Kallfass,Hermann Massler,Sandrine Wagner,Dirk Schwantuschke,Peter Brückner,C. Haupt,Rudolf Kiefer,Ruediger Quay,Oliver Ambacher +8 more
TL;DR: In this article, a low-noise MMIC was implemented in a new AlGaN/GaN on s.i.c. SiC HEMT technology with 100 nm gate length and maximum cutoff frequencies of 80 and >200 GHz.
Journal ArticleDOI
Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub
Maciej Cwiklinski,Christian Friesicke,Peter Brückner,Dirk Schwantuschke,Sandrine Wagner,Roger Lozar,Hermann Mabler,Rudiger Quay,Oliver Ambacher +8 more
TL;DR: In this article, the first reported full W-band (75-110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology were described.
Journal ArticleDOI
Enhanced mechanical performance of AlN/nanodiamond micro-resonators
N. Heidrich,D. Iankov,Jakob Hees,Wilfried Pletschen,R. E. Sah,Lutz Kirste,Verena Zuerbig,Christoph E. Nebel,Oliver Ambacher,Oliver Ambacher,Vadim Lebedev +10 more
TL;DR: In this article, single and doubly clamped unimorph NCD-on-AlN micro-resonators were fabricated and then characterized by laser vibrometry towards their flexural resonant frequencies in the range of 0.1-20 MHz to deduce their mechanical properties.
Journal ArticleDOI
Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
TL;DR: In this article, a transmission electron microscopy (TEM) study was carried out on a series of AlGaN/GaN high-electron mobility transistor (HEMT) structures grown by plasma assisted molecular beam epitaxy (PA-MBE) on Si (111).