O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Optical patterning of GaN films
Michael K. Kelly,Oliver Ambacher,B. Dahlheimer,G. Groos,Roman Dimitrov,H. Angerer,Martin Stutzmann +6 more
TL;DR: In this article, a patterned etch of GaN films was achieved with laser-induced thermal decomposition, where high energy laser pulses were used to locally heat the film above 900°C, causing rapid nitrogen effusion.
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Piezoelectric properties of polycrystalline AlN thin films for MEMS application
TL;DR: In this paper, the piezoelectric coefficient d 33eff of aluminium nitride thin films was measured using both, piezoresponse force microscopy and an interferometric technique.
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Electron affinity of AlxGa1−xN(0001) surfaces
S.P. Grabowski,M. Schneider,Hermann Nienhaus,W. Mönch,Roman Dimitrov,Oliver Ambacher,Martin Stutzmann +6 more
TL;DR: In this article, the electronic properties and the electron affinities of AlxGa1−xN(0001) surfaces were investigated by ultraviolet photoemission spectroscopy (UPS) over the whole composition range.
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Comparison of normal and inverse poly(3-hexylthiophene)/fullerene solar cell architectures
TL;DR: In this article, two different architectures (normal and inverse) for poly(3-hexylthiophene) and poly(6,6]-phenyl-C61-butyric acid methyl ester (PCBM) polysilicon solar cells are presented.
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Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
TL;DR: In this article, Si-doped epitaxial GaN layers with Ga- and N-face polarity were grown by plasma-induced molecular-beam epitaxy (PIMBE) in order to characterize the influence of polarity on the electrical properties of Pt Schottky diodes.