O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Sub-MHz-Linewidth 200-mW Actively Stabilized 2.3-μm Semiconductor Disk Laser
Sebastian Kaspar,B. Rosener,Marcel Rattunde,Tino Töpper,Christian Manz,Klaus Köhler,Oliver Ambacher,Joachim Wagner +7 more
TL;DR: In this paper, an actively stabilized single-frequency vertical-external-cavity surface-emitting semiconductor laser (VECSEL) at a wavelength of 2.3 μ m was realized.
Journal ArticleDOI
Highly efficient THz emission from differently grown InN at 800 nm and 1060 nm excitation
Gabor Matthäus,V. Cimalla,B. Pradarutti,S. Riehemann,Gunther Notni,Vadim Lebedev,Oliver Ambacher,Stefan Nolte,Andreas Tünnermann,Andreas Tünnermann +9 more
TL;DR: In this article, a detailed study on differently molecular-beam epitaxy (MBE) grown InN wavers as THz surface emitters is reported, which is caused by the absence of any intervalley scattering, which increases the effective mass of the photogenerated electrons and, thus, reduces the photo-Dember effect.
Journal ArticleDOI
Normally-Off AlGaN/GaN/AlGaN Double Heterostructure FETs With a Thick Undoped GaN Gate Layer
TL;DR: In this paper, a double-heterostructure Al0.26Ga0.93N-based field effect transistors (DHFETs) using a 35-nm-thick undoped GaN layer underneath the gate metallization was reported.
Proceedings ArticleDOI
Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Stefan Moench,Richard Reiner,Beatrix Weiss,Patrick Waltereit,Rudiger Quay,Oliver Ambacher,Ingmar Kallfass +6 more
TL;DR: In this paper, a GaN-on-Si HEMT half-bridges with gate drivers with capacitive coupling through a common conductive substrate influences switching characteristics and the measured hard-switching turn-on time with floating substrate increased to over 16 ns as compared to conventional source-connected substrate (1 ns).
Journal ArticleDOI
Sputter depth profiling of InN layers
R. Kosiba,Gernot Ecke,V. Cimalla,Lothar Spieß,Stefan Krischok,Juergen A. Schaefer,Oliver Ambacher,William J. Schaff +7 more
TL;DR: In this article, the incidence angle of the ion beam plays a crucial role in the sputter behavior of InN and is very important for the proper sputter depth profiling procedure.