O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Space charge limited electron transport in AlGaN photoconductors
TL;DR: In this paper, an adverse effect of broad-band trap distribution on the spectral, electrical, and time-response characteristics of AlGaN-based photodetectors was studied.
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Suspended nanowire web
Volker Cimalla,Mike Stubenrauch,Frank Weise,Michael Fischer,Katja Tonisch,Martin Hoffmann,Oliver Ambacher +6 more
TL;DR: In this paper, a complex three-dimensional, nanowire based nanoarchitecture is presented, which combines the benefits of three self-organization mechanisms to produce nanostructures, i.e., formation of nanoneedles, the droplet formation out of a thin metal film, and the vapor-liquid-solid growth of nanowires.
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Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
M. J. Murphy,B. E. Foutz,K. Chu,Hong Wu,W. Yeo,William J. Schaff,Oliver Ambacher,L.F. Eastman,T. J. Eustis,Roman Dimitrov,Martin Stutzmann,W. Rieger +11 more
TL;DR: In this article, high quality Ga-face and N-face AlGaN/GaN-based heterostructures have been grown by plasma induced molecular beam epitaxy.
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Analysis and Development of Submillimeter-Wave Stacked-FET Power Amplifier MMICs in 35-nm mHEMT Technology
Ana Belen Amado-Rey,Y. Campos-Roca,Friedbert van Raay,Christian Friesicke,Sandrine Wagner,Hermann Massler,Arnulf Leuther,Oliver Ambacher +7 more
TL;DR: In this paper, the first stacked field effect transistor (stacked-FET) submillimeter-wave monolithic integrated circuit (S-MMIC) power amplifier cell operating at 0.3 GHz was reported.
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Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas
C. Buchheim,Rüdiger Goldhahn,Gerhard Gobsch,Katja Tonisch,V. Cimalla,F. Niebelschütz,Oliver Ambacher +6 more
TL;DR: In this article, the voltage dependent electric field strengths of barrier and cap layers were determined by electroreflectance spectroscopy (ER) and the voltage maps of the ER spectra were assigned to the formation/depletion of a twodimensional electron gas below and a two-dimensional hole gas above the AlGaN barrier.