Oliver Ambacher

TL;DR: In this article, the results obtained by various procedures applied to LVV and KLL Auger peaks of silicon (Si) for determining the Auger current were compared, and it was shown that the results for the content of Si in SiC can be achieved by the method in which the area below the Augerspeak in the direct N (E ) spectrum after subtracting the background of inelastically scattered Auger electrons of the given peak and of the so-called true secondary electrons.

TL;DR: In this article, it is shown that the discrepancy of experiment and ab initio theory are almost completely eliminated for the AlGaN/GaN based heterostructures when polarization non-linearity is accounted for.

TL;DR: In this paper, an active millimeter-wave imaging tomograph for material analysis and concealed object detection purposes is presented, where a single-antenna transmit and receive module is used for illumination and measurement of the reflected power.

TL;DR: In this article, three power amplifier MMICs at Ka-band frequencies are reported, and they are realized using AlGaN/GaN HEMTs with a gate length of 100 nm.

TL;DR: In this article, the dynamics of photoexcited carriers in GaInN/GaN quantum wells (QWs) grown on ammonothermal GaN, especially thermalization and recombination rates were measured by time-resolved photoluminescence (PL) and electroluminecence spectroscopy.