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Oliver Ambacher

Researcher at Fraunhofer Society

Publications -  862
Citations -  29006

Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.

Papers
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Journal ArticleDOI

Two-dimensional electron gas recombination in undoped AlGaN/GaN heterostructures

Gema Martínez-Criado, +4 more
- 09 Jun 2004 - 
TL;DR: In this article, the radiative recombination of a two-dimensional electron gas (2DEG) was investigated in Al0.30Ga0.70N/GaN single heterostructures without intentionally doping the barrier material, i.e., where the 2DEG appears at the interface due only to polarization effects.
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Ionization Energy and Electron Affinity of Clean and Oxidized AlxGa1-xN(0001) Surfaces

Hermann Nienhaus, +6 more
- 01 Jan 2001 - 
TL;DR: Ionization energies and electron affinities of clean AlxGa1-xN(0001) surfaces were investigated by ultraviolet photoemission spectroscopy over the whole composition range as discussed by the authors.
Proceedings ArticleDOI

Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power

Dirk Schwantuschke, +6 more
TL;DR: In this paper, the design of a power amplifier covering the entire E-band satellite communication bands (71-76 GHz and 81-86 GHz) and demonstrating a high saturated output power of more than 1 W across this frequency range of interest was reported.
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CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.

St. Linkohr, +5 more
- 20 Feb 2013 - 
TL;DR: The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterostructures was investigated and stable sensitivity over several CIP cycles were achieved for optimized sensor structures.
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Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy

Manuel Paulino Linares Herrera, +4 more
- 06 May 2004 - 
TL;DR: In this paper, the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy was studied.