Oliver Ambacher

TL;DR: In this paper, the design, analysis, and room-temperature performance of two W-band LNA MMICs fabricated in two different technology variations are presented, and the investigation demonstrates the noise improvement of the given 50-nm gate-length InGaAs mHEMT technology with reduced necessary drain currents.

TL;DR: In this article, the work function difference between Ga-face and N-face GaN is found to be 0.25eV. This difference is caused by a surface band bending.

TL;DR: The paper presents the design, implementation and measured performance of a 77 GHz heterodyne receiver MMIC realized in a new AlGaN/GaN on s.i. SiC HEMT technology with 100 nm gate length and maximum cutoff frequencies fT and ƒmax of 80 and >200 GHz, respectively.

TL;DR: In this article, the authors give some examples for the application of Auger electron spectroscopy to nanostructures mostly in group III-nitride semiconductor technologies: (i) nanowires, consisting of Si and AlN with diameters of about 20 to 200 nm; these nanwires and nanorods have been grown by different technologies and some of them are contacted on both ends by FIB grown Pt contacts,

TL;DR: In this paper, the authors calculated the imaginary part of the dielectric function close to and above the absorption edge of wurtzite ZnO and found three main contributing mechanisms: optical transitions involving discrete exciton states, excitonically enhanced interband optical transitions, and exciton-phonon complexes.