O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Patrick Waltereit,Wolfgang Bronner,Rudiger Quay,Michael Dammann,Stefan Müller,Klaus Köhler,Michael Mikulla,Oliver Ambacher,L. Harm,Martino Lorenzini,T. Rodle,K. Riepe,K. Bellmann,C. Buchheim,Rüdiger Goldhahn +14 more
TL;DR: In this paper, structural, optical and electrical properties of AlGaN/GaN heterostructures grown by MOCVD 3-inch on SiC substrates were systematically studied.
Proceedings ArticleDOI
A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors
Stefan Moench,Richard Reiner,Patrick Waltereit,Stefan Müller,Rudiger Quay,Oliver Ambacher,Ingmar Kallfass +6 more
TL;DR: In this article, a normally-off 600V GaN Power IC is presented, which combines a large-area power transistor with intrinsic freewheeling diode, a gate driver, and temperature and current sensors on-chip.
Proceedings ArticleDOI
Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
Erdin Ture,Peter Brückner,Rudiger Quay,Oliver Ambacher,Mohamed Alsharef,Ralf Granzner,Frank Schwierz +6 more
TL;DR: In this article, the design and fabrication of enhancement-mode high-electron mobility transistors (HEMTs) in AlGaN/GaN FinFET technology with 100 nm of gate length (L g = 100 nm).
Journal ArticleDOI
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
M. Casar,Maximilian Dammann,Vladimir Polyakov,Patrick Waltereit,Rudiger Quay,Michael Mikulla,Oliver Ambacher +6 more
TL;DR: A drain-voltage step-stress method is applied to the AlGaN/GaN HEMTs for investigating different layouts, and a consequent application enabled us to assign parameters mitigating the peak field strength and improve reliability.
Proceedings ArticleDOI
Tunable compound eye cameras
TL;DR: In this article, the authors present design and realization concepts for thin compound eye cameras with enhanced optical functionality based on facets with individually tunable focus lengths and viewing angles for scanning of the object space.