O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Analysis of the Growth of Laterally Aligned SnO2 Nanowires by Thermodynamic Considerations and Experiments
Jasmin-Clara Bürger,Sebastian Gutsch,Yi Thomann,Ralf Thomann,Björn Christian,Oliver Ambacher,Margit Zacharias +6 more
TL;DR: In this paper, the experimental tuning of the growth of freestanding SnO2 nanowires to a laterally aligned nanowire growth mode was reported, and thermodynamic considerations taking into acc...
Proceedings ArticleDOI
Analysis and modeling of GaN-based multi field plate Schottky power diodes
TL;DR: In this paper, the authors focus on compact modeling of non-linear capacitances of lateral, high-voltage Schottky diodes realized in a multi-field plate design.
Journal ArticleDOI
Electron transport properties of indium oxide – indium nitride metal‐oxide‐semiconductor heterostructures
Vadim Lebedev,Ch. Y. Wang,S. Hauguth,Vladimir Polyakov,Frank Schwierz,V. Cimalla,Th. Kups,Francisco M. Morales,Juan G. Lozano,David González,Marcel Himmerlich,J. A. Schaefer,Stefan Krischok,Oliver Ambacher +13 more
TL;DR: In this paper, structural, chemical and electron transport properties of In2O3/InN heterostructures and oxidized InN epilayers are reported and it is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer.
Journal ArticleDOI
Planar Zero Bias Schottky Diodes on an InGaAs Metamorphic HEMT MMIC Process
TL;DR: In this paper, a planar zero bias Schottky diodes on an InGaAs metamorphic high-electron-mobility transistor (mHEMT) technology is presented.
Journal ArticleDOI
Influence of metal thickness to sensitivity of Pt/GaN Schottky diodes for gas sensing applications
Vinayak Tilak,Muhammad Ali,V. Cimalla,Venkatesan Manivannan,Peter Micah Sandvik,Jeffery B. Fedison,Oliver Ambacher,D. Merfeld +7 more
TL;DR: In this paper, three sets of diodes were fabricated with 80 A, 240 A and 400 A of Pt for the Schottky contacts and the electronic performances of 0.25 × 0.75 mm and 1.0 × 1.25 mm devices were tested in up to 1 % H2 gas in synthetic air.