There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.

/pdf/nanoscale-thermal-transport-1frv881kzm.pdf

Nanoscale thermal transport

The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

50 Years of Image Analysis

A superhydrophobic surface is a surface with a water contact angle close to or higher than 150°. In this feature article, we review the historical and present research on superhydrophobic surfaces, including the characterization of superhydrophobicity, different ways to fabricate rough surfaces, and low-surface-energy modifications on inorganic and organic rough surfaces. It is the combination of surface roughness and low-surface-energy modification that leads to superhydrophobicity. Notably, research on superhydrophobic surfaces has not only fundamental interest but various possible functional applications in micro- and nano-materials and devices.

Superhydrophobic surfaces: from structural control to functional application

An integrated circuit (IC) approach to thermal microsensors is presented. The focus is on thermal sensors with on-chip bias and signal conditioning circuits made by industrial complementary metal-oxide-semiconductor (CMOS) IC technology in combination with post-CMOS micromachining or deposition techniques. CMOS materials and physical effects pertinent to thermal sensors are summarized together with basic structures used for microheaters, thermistors, thermocouples, thermal isolation, and heat sinks. As examples of sensors using temperature measurement, we present micromachined CMOS radiation sensors and thermal converters. Examples for sensors based on thermal actuation include thermal flow and pressure sensors, as well as thermally excited microresonators for position and chemical sensing. We also address sensors for the characterization of process-dependent thermal properties of CMOS materials, such as thermal conductivity, Seebeck coefficient, and heat capacity, whose knowledge is indispensable for thermal sensor design. Last, two complete packaged microsystems-a thermoelectric air-flow sensor and a thermoelectric infrared intrusion detector-are reported as demonstrators.

Micromachined thermally based CMOS microsensors

Magnetic phase transition in two-dimensional ultrathin Fe films on Au(100).

The thermal conductivities /spl kappa/ of the dielectric and conducting thin films of three commercial CMOS processes were determined in the temperature range from 120 to 400 K. The measurements were performed using micromachined heatable test structures containing the layers to be characterized. The /spl kappa/ values of thermally grown silicon oxides are reduced from bulk fused silica by roughly 20%. The /spl kappa/ of phosphosilicate and borophosphosilicate glasses are 0.94/spl plusmn/0.08 W m/sup -1/ K/sup -1/ and 1.18/spl plusmn/0.06 W m/sup -1/ K/sup -1/, respectively, at 300 K. A plasma-enhanced chemical-vapor-deposition silicon-nitride layer has a thermal conductivity of 2.23/spl plusmn/0.12 W m/sup -1/ K/sup -1/ at 300 K. This value is between published data for atmospheric-pressure CVD and low-pressure CVD nitrides. For the metal layers, we found thermal conductivities between 167 W m/sup -1/ K/sup -1/ and 206 W m/sup -1/ K/sup -1/, respectively, at 300 K, to be compared with 238 W m/sup -1/ K/sup -1/ of bulk aluminum. The temperature-dependent product /spl kappa//spl rho/ of /spl kappa/ with the electrical resistivity /spl rho/ agrees better than 8.2% between 180-400 K with that of pure bulk aluminum. The /spl kappa/ values of the polysilicon layers are between 22.4 W m/sup -1/ K/sup -1/ and 37.3 W m/sup -1/ K/sup -1/ at 300 K. They are reduced from similarly doped bulk silicon by factors of between 2.0-1.3. The observed discrepancies between thin film and bulk data demonstrate the importance of determining the process-dependent thermal conductivities of CMOS thin films.

Process-dependent thin-film thermal conductivities for thermal CMOS MEMS

Microtransducer Operation.- Material Properties: Measurement and Data.- MEMS and NEMS Simulation.- System-Level Simulation of Microsystems.- Thermal-Based Microsensors.- Photon Detectors.- Free-Space Optical MEMS.- Integrated Micro-Optics.- Microsensors for Magnetic Fields.- Mechanical Microsensors.- Semiconductor-Based Chemical Microsensors.- Microfluidics.- Biomedical Systems.- Microactuators.- Micromachining Technology.- LIGA Technology for R&D and Industrial Applications.- 17 Interface Circuitry and Microsystems.

MEMS: A Practical Guide to Design, Analysis, and Applications

Currently available cochlear implants are based on electrical stimulation of the spiral ganglion neurons. Optical stimulation with arrays of micro-sized light-emitting diodes (µLEDs) promises to increase the number of distinguishable frequencies. Here, the development of a flexible GaN-based micro-LED array as an optical cochlear implant is reported for application in a mouse model. The fabrication of 15 µm thin and highly flexible devices is enabled by a laser-based layer transfer process of the GaN-LEDs from sapphire to a polyimide-on-silicon carrier wafer. The fabricated 50 × 50 µm2 LEDs are contacted via conducting paths on both p- and n-sides of the LEDs. Up to three separate channels could be addressed. The probes, composed of a linear array of the said µLEDs bonded to the flexible polyimide substrate, are peeled off the carrier wafer and attached to flexible printed circuit boards. Probes with four µLEDs and a width of 230 µm are successfully implanted in the mouse cochlea both in vitro and in vivo. The LEDs emit 60 µW at 1 mA after peel-off, corresponding to a radiant emittance of 6 mW mm−2.

https://iopscience.iop.org/article/10.1088/0022-3727/47/20/205401/pdf

Oliver Paul

Papers

Micromachined thermally based CMOS microsensors

Magnetic phase transition in two-dimensional ultrathin Fe films on Au(100).

Process-dependent thin-film thermal conductivities for thermal CMOS MEMS

MEMS: A Practical Guide to Design, Analysis, and Applications

GaN-based micro-LED arrays on flexible substrates for optical cochlear implants