O
Olivier Jardel
Researcher at Alcatel-Lucent
Publications - 57
Citations - 1107
Olivier Jardel is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 16, co-authored 56 publications receiving 1015 citations. Previous affiliations of Olivier Jardel include University of Limoges & Alenia Aeronautica.
Papers
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Journal ArticleDOI
An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR
Olivier Jardel,F. De Groote,Tibault Reveyrand,Jean-Claude Jacquet,C. Charbonniaud,Jean-Pierre Teyssier,D. Floriot,Raymond Quéré +7 more
TL;DR: In this paper, a large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related trapping effects is proposed, which is well formulated to preserve convergence capabilities and simulation times.
Journal ArticleDOI
AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz
N. Sarazin,Erwan Morvan,M.-A. di Forte Poisson,M. Oualli,Christophe Gaquiere,Olivier Jardel,O. Drisse,M. Tordjman,M. Magis,Sylvain Delage +9 more
TL;DR: In this paper, high-frequency high-electron-mobility transistors (HEMTs) were fabricated on AlInN/AlN/GaN heterostructures grown by low-pressure metal-organic chemical vapor deposition on a SiC substrate.
Proceedings ArticleDOI
A Drain-Lag Model for AlGaN/GaN Power HEMTs
Olivier Jardel,F. De Groote,C. Charbonniaud,Tibault Reveyrand,Jean-Pierre Teyssier,Raymond Quéré,D. Floriot +6 more
TL;DR: In this article, drain-lag effects have been added in a non-linear electrothermal model for AlGaN/GaN HEMTs, which allows a better description of the I-V characteristics of measured devices as well as their large signal characteristics.
Proceedings ArticleDOI
State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers
Stéphane Piotrowicz,Erwan Morvan,Raphaël Aubry,S. Bansropun,T. Bouvet,Eric Chartier,T. Dean,O. Drisse,Christian Dua,Didier Floriot,M. A. Di-Forte Poisson,Y. Gourdel,A.J. Hydes,Jean-Claude Jacquet,Olivier Jardel,D. Lancereau,J.O. McLean,G. Lecoustre,Audrey Martin,Z. Ouarch,Tibault Reveyrand,M. Richard,N. Sarazin,D. Thenot,Sylvain Delage +24 more
TL;DR: In this article, the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency were presented, achieving 58 W of output power with 38% PAE in X-band were obtained using an 18 mm 2 2 2-stages amplifier.
Journal ArticleDOI
ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
Raphaël Aubry,Jean-Claude Jacquet,M. Oualli,O. Patard,Stéphane Piotrowicz,Eric Chartier,N. Michel,L. Trinh Xuan,D. Lancereau,C. Potier,M. Magis,Piero Gamarra,Cedric Lacam,M. Tordjman,Olivier Jardel,Christian Dua,Sylvain Delage +16 more
TL;DR: In this paper, high-frequency metal insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3" SiC substrate.