A display panel and a display device are provided. The display panel comprises a central region and peripheral regions. The peripheral regions are provided at two opposite ends of the display panel and have a first curvature; the central region is provided between the two opposite ends of the display panel and has a second curvature; and the second curvature of the central region is smaller than the first curvature of the peripheral regions.

Display panel and display device

System and method for regulating a power converter. The system includes a first signal generator configured to receive a first sensed signal and generate an output signal associated with demagnetization. The first sensed signal is related to a first winding coupled to a secondary winding for a power converter, and the secondary winding is associated with at least an output current for the power converter. Additionally, the system includes a ramping signal generator configured to receive the output signal and generate a ramping signal, and a first comparator configured to receive the ramping signal and a first threshold signal and generate a first comparison signal based on at least information associated with the ramping signal and the first threshold signal. Moreover, the system includes a second comparator configured to receive a second sensed signal and a second threshold signal and generate a second comparison signal.

Systems and methods for constant voltage mode and constant current mode in flyback power converters with primary-side sensing and regulation

A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well.

Power device integration on a common substrate

A laterally diffused metal-oxide-semiconductor transistor device includes a substrate having a first conductivity type with a semiconductor layer formed over the substrate. A source region and a drain extension region of the first conductivity type are formed in the semiconductor layer. A body region of a second conductivity type is formed in the semiconductor layer. A conductive gate is formed over a gate dielectric layer that is formed over a channel region. A drain contact electrically connects the drain extension region to the substrate and is laterally spaced from the channel region. The drain contact includes a highly-doped drain contact region formed between the substrate and the drain extension region in the semiconductor layer, wherein a topmost portion of the highly-doped drain contact region is spaced from the upper surface of the semiconductor layer. A source contact electrically connects the source region to the body region.

Semiconductor devices having charge balanced structure

Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.

Semiconductor device and method of manufacturing the same

A semiconductor die package includes: an assembly including a semiconductor die, a clip structure attached to an upper surface of the semiconductor die, and a heat sink attached to an upper surface of the clip structure; and a molding material partially encapsulating the assembly, wherein an upper surface of the heat sink is exposed through the molding material.

Semiconductor device package and method of assembly thereof

A packaged multi-output converter (200) comprising a leadframe with a chip pad (201) as ground terminal and a plurality of leads (202) including the electrical input terminal (203); a first FET chip (sync chip, 220) with its source terminal affixed to the leadframe and on its opposite surface a first drain terminal (221) positioned adjacent to a second drain terminal (222), the drain terminals connected respectively by a first (241) and a second (242) metal clip to a first (204) and second (205) output lead; a second FET chip (control chip, 211), positioned vertically over the first drain terminal, with its source terminal attached onto the first clip; a third FET chip (control chip, 212), positioned vertically over the second drain terminal, with its source terminal attached onto the second clip; and the drain terminals (213, 214) of the second and third chips attached onto a third metal clip (260) connected to the input lead (203).

Integrating multi-output power converters having vertically stacked semiconductor chips

A wirebond-less packaged semiconductor device includes a plurality of I/O contacts, at least one semiconductor die, the semiconductor die having a bottom major surface and a top major surface, the top major surface having at least two electrically isolated electrodes, and a conductive clip system disposed over the top major surface, the clip system comprising at least two electrically isolated sections coupling the electrodes to respective I/O contacts.

Wirebond-less semiconductor package

A pull-down MOSFET (110) is coupled between a drain and gate of a MOSFET main switch transistor (102) in a switching type DC-to-DC power converter. A gate of the pull-down MOSFET (110) is coupled to the drain of the main switch transistor (102) by a capacitor 118 and is connected to a source of the main switch transistor (102) by a resistor (120). The pull-down MOSFET (110) is operated by capacitive coupling to the voltage drop across the main switch transistor (102) and can be used to hold the gate of the main switch transistor (102) at or near its source potential to avoid or reduce unintentional turn-on of the main switch transistor (102) by the Miller effect.

Mosfet with gate pull-down

A power FET (100) comprising a leadframe including a pad (110), a first lead (111), and a second lead (112); a first metal clip (150) including a plate (150a), an extension (150b) and a ridge (150c), the plate and extension spaced from the leadframe pad and the ridge connected to the pad; a vertically assembled stack of FET chips in the space between the plate and the pad, the stack including a first n-channel FET chip (120) having the drain terminal on one surface and the source and gate terminals on the opposite surface, the drain terminal attached to the pad, the source terminal attached to a second clip (140) tied to the first lead; and a second n-channel FET chip (130) having the source terminal on one surface and the drain and gate terminals on the opposite surface, the source terminal attached to the second clip, its drain terminal attached to the first clip; wherein the drain-source on-resistance of the FET stack is smaller than the on-resistance of the first FET chip and of the second FET chip.

Osvaldo Jorge Lopez

Papers

Semiconductor device package and method of assembly thereof

Integrating multi-output power converters having vertically stacked semiconductor chips

Wirebond-less semiconductor package

Mosfet with gate pull-down

Vertically Stacked Power FETS and Synchronous Buck Converter Having Low On-Resistance