P
P. Fazan
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 36
Citations - 1551
P. Fazan is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Transistor & MOSFET. The author has an hindex of 18, co-authored 36 publications receiving 1514 citations.
Papers
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Journal ArticleDOI
A capacitor-less 1T-DRAM cell
TL;DR: A simple true 1 transistor dynamic random access memory (DRAM) cell concept is proposed for the first time, using the body charging of partially-depleted SOI devices to store the logic "1" or "0" binary states.
Proceedings ArticleDOI
A SOI capacitor-less 1T-DRAM concept
TL;DR: In this article, a simple 1T DRAM cell concept is proposed for the first time, which exploits the body charging of PD SOI devices to store the information and allows the manufacture of low cost DRAMs and eDRAMs for 100 and sub 100 nm generations.
Patent
Data storage device and refreshing method for use with such device
P. Fazan,Serguei Okhonin +1 more
TL;DR: In this article, a data storage device such as a DRAM memory having a plurality of data storage cells (10) is disclosed, each data storage cell has a physical parameter which varies with time and represents one of two binary logic states.
Journal ArticleDOI
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model
TL;DR: In this article, the implications of inversion charge linearization in compact MOS transistor modeling are discussed, and an improvement to the EKV charge-based model is proposed in the form of a more accurate charge-voltage relationship.
Journal ArticleDOI
Principles of transient charge pumping on partially depleted SOI MOSFETs
TL;DR: In this paper, the authors proposed a new method to determine the interface trap density in partially depleted silicon-on-insulator (SOI) floating body MOSFETs.