P.J.A. Thijs

Bio: P.J.A. Thijs is an academic researcher from Philips. The author has contributed to research in topics: Quantum well & Semiconductor laser theory. The author has an hindex of 21, co-authored 62 publications receiving 1368 citations.

High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

Abstract: Improved performance of 1.5- mu m wavelength lasers and laser amplifiers using strained In/sub x/Ga/sub 1-x/As-InGaAsP quantum well devices is reported. The device structures fabricated to study the effects of strained quantum wells on their performance are described. These devices showed TM mode gain, demonstrating the strain-induced heavy-hole-light hole reversal in the valence band. Lasers using these tensile strained quantum wells show higher and narrower gain spectra and laser amplifiers have a higher differential gain compared to compressively strained quantum well devices. Consequently, the tensile strained quantum well lasers show the smallest linewidth enhancement factor alpha =1.5 (compression alpha =2.5) and the lowest K-factor of 0.22 ns (compression K=0.58 ns), resulting in an estimated intrinsic 3 dB modulation bandwidth of 40 GHz (compression 15 GHz). >

High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 mu m

Abstract: Buried heterostructure Ga0.2In0.8As strained-layer (strain 1.8%) separate confinement, multiple quantum well laser diodes emitting at 1.5 μm were fabricated by hybrid LP-MOVPE/LPE. Improved performance as a result of the application of a strained-layer active region is demonstrated for the first time. A CW threshold current of 10 mA, differential quantum efficiency of 82%, T0 of 97 K and maximum output powers/facet as high as 70 mW CW and 180 mW for pulsed operation were measured. Lifetests at 60°C heat-sink temperature and 5 mW output power show almost no degradation after 2000 h.

Polarization insensitive multiple quantum well laser amplifiers for the 1300 nm window

Abstract: A polarization insensitive (less than 1 dB gain difference over the 3 dB gain bandwidth) multiple quantum well laser amplifier for the 1300 nm window is reported for the first time. The amplifiers employ a single active layer containing three tensile strained and four compressively strained quantum wells and show a fiber to fiber gain of 16 dB at 1310 nm and 200 mA driving current. Furthermore at the same wavelength these devices have a record low fiber coupled noise figure of 6.5 dB and a conveniently high fiber coupled saturation output power of 13 dBm for both polarizations.

Reduced intermodulation distortion in 1300 nm gain-clamped MQW laser amplifiers

Abstract: A 1300 nm gain-clamped DFB multiple quantum well laser amplifier with negligible pass band ripple, 20 dB fiber to fiber gain, and 10 dB reduction in gain saturation is demonstrated. The remaining gain saturation is attributed to longitudinal hole burning. After some modifications the reduction in gain saturation is improved to more than 30 dB for an input signal having the same polarization state as the lasing mode. From these experiments and a theoretical analysis it is concluded that there is a potential for realizing highly linear 1300 nm CATV semiconductor laser amplifiers using gain-clamping with less intermodulation distortion than today's directly modulated linear semiconductor lasers. >

A compact nine-channel multiwavelength laser

Abstract: A phased-array-based multiwavelength laser has been realized on a chip area of 3.5/spl times/2.5 mm/sup 2/. The device has nine channels, spaced at 400 GHz around a central wavelength of 1.55 /spl mu/m. Its performance is characterized by a minimum threshold current of 101 mA, a maximum fiber-coupled power of 0.37 mW, and a linewidth of 21 MHz. In addition, simultaneous four-channel operation is demonstrated.

Low-threshold amplified spontaneous emission and lasing from colloidal nanocrystals of caesium lead halide perovskites

Abstract: Metal halide semiconductors with perovskite crystal structures have recently emerged as highly promising optoelectronic materials. Despite the recent surge of reports on microcrystalline, thin-film and bulk single-crystalline metal halides, very little is known about the photophysics of metal halides in the form of uniform, size-tunable nanocrystals. Here we report low-threshold amplified spontaneous emission and lasing from ∼10 nm monodisperse colloidal nanocrystals of caesium lead halide perovskites CsPbX3 (X=Cl, Br or I, or mixed Cl/Br and Br/I systems). We find that room-temperature optical amplification can be obtained in the entire visible spectral range (440–700 nm) with low pump thresholds down to 5±1 μJ cm−2 and high values of modal net gain of at least 450±30 cm−1. Two kinds of lasing modes are successfully observed: whispering-gallery-mode lasing using silica microspheres as high-finesse resonators, conformally coated with CsPbX3 nanocrystals and random lasing in films of CsPbX3 nanocrystals. Lead halide perovskite colloidal nanocrystals have promising optoelectronic properties, such as high photoluminescence quantum yields and narrow emission linewidths. Here, the authors report low-threshold amplified spontaneous emission and two kinds of lasing in nanostructured caesium lead halide perovskites.

PHASAR-based WDM-devices: Principles, design and applications

Abstract: Wavelength multiplexers, demultiplexers and routers based on optical phased arrays play a key role in multiwavelength telecommunication links and networks. In this paper, a detailed description of phased-array operation and design is presented and an overview is given of the most important applications.

An introduction to InP-based generic integration technology

Abstract: Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets. Recently, a novel approach in photonic integration is emerging which will reduce the R&D and prototyping costs and the throughput time of PICs by more than an order of magnitude. It will bring the application of PICs that integrate complex and advanced photonic functionality on a single chip within reach for a large number of small and larger companies and initiate a breakthrough in the application of Photonic ICs. The paper explains the concept of generic photonic integration technology using the technology developed by the COBRA research institute of TU Eindhoven as an example, and it describes the current status and prospects of generic InP-based integration technology.

Bandgap engineering of two-dimensional semiconductor materials

Abstract: Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.

Large-scale photonic integrated circuits

Abstract: 100-Gb/s dense wavelength division multiplexed (DWDM) transmitter and receiver photonic integrated circuits (PICs) are demonstrated. The transmitter is realized through the integration of over 50 discrete functions onto a single monolithic InP chip. The resultant DWDM PICs are capable of simultaneously transmitting and receiving ten wavelengths at 10 Gb/s on a DWDM wavelength grid. Optical system performance results across a representative DWDM long-haul link are presented for a next-generation optical transport system using these large-scale PICs. The large-scale PIC enables significant reductions in cost, packaging complexity, size, fiber coupling, and power consumption.