P. Jin

Bio: P. Jin is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Sputter deposition & Thin film. The author has an hindex of 7, co-authored 9 publications receiving 238 citations.

Microstructure of α-alumina thin films deposited at low temperatures on chromia template layers

Abstract: Radio frequency sputtering has been used to deposit α-alumina (α-Al2O3) thin films at substrate temperatures of 280–560 °C. The films are shown to be single phased and hard. Nanoindentation gives values of 306±31 and 27±3 GPa for elastic modulus and hardness, respectively, for a substrate temperature of 280 °C. Growth of the α phase was achieved by in situ predeposition of a chromia template layer. Chromia crystallizes in the same hexagonal structure as α-alumina, with a lattice mismatch of 4.1% in the a- and 4.6% in the c-parameter, and is shown to nucleate readily on the amorphous substrates (silicon with a natural oxide layer). This results in local epitaxy of α-alumina on the chromia layer, as is shown by transmission electron microscopy. The alumina grains are columnar with grain widths increasing from 22±7 to 41±9 nm, as the temperature increases from 280 to 560 °C. This is consistent with a surface diffusion dominated growth mode and suggests that α-alumina deposition at low temperatures is possibl...

Low temperature deposition of α-Al2O3 thin films by sputtering using a Cr2O3 template

Abstract: A description about low temperature deposition of a-Al2O3 thin films by sputtering was presented. Cr2O3 thin layer was used as a template. Nanoindentation was used to study the mechanical propertie ...

Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures

Abstract: SrTiO3 (STO) thin films were deposited on p-type Si(100) substrates by rf magnetron sputtering at various substrate temperatures, and their structural and electrical properties were investigated without post-deposition annealing. The thickness of the films was in the range from 300 to 500 nm while the deposition temperature was varied between room temperature and 550°C. Compositional and structural characterizations included X-ray diffraction, Rutherford back-scattering spectroscopy and variable-angle spectroscopic ellipsometry. Metal-insulator-semiconductor diodes with the configuration of Al/STO/p-Si/Al were fabricated and characterized by capacitance-voltage, current-voltage and admittance spectroscopy measurements. Depending on the substrate temperatures, the dielectric constant of the films varied between 60 and 120 and the loss factor between 0.019 and 0.051 at 100 kHz. All films showed high charge storage capacity, varying between 1.9 and 3μm cm−2. However, the films deposited at 200°C sho...

Influence of high-energy Si+ ion irradiation on microstructure and mechanical properties of alumina films

Abstract: Amorphous alumina films, approximately 600 nm in thickness, prepared on Si(100) substrates by RF magnetron sputtering were irradiated with 2.0 MeV Si + ions at a dose of 1×10 17 ions/cm 2 and the influence on the composition, microstructure, and mechanical properties was examined by Rutherford backscattering, X-ray diffraction and nano-indentation measurements. It was found that the O/Al ratio in the films was approximately 1.5, and there was no significant alteration in this ratio after ion irradiation. However, a structural change from amorphous to the crystalline γ-alumina was observed. Hardness and elastic modulus of the irradiated film were significantly increased from approximately 11 and 181 GPa up to approximately 25 and 246 GPa, respectively.

65 years of ZnO research – old and very recent results

Abstract: The research on ZnO has a long history but experiences an extremely vivid revival during the last 10 years. We critically discuss in this didactical review old and new results concentrating on optical properties but presenting shortly also a few aspects of other fields like transport or magnetic properties. We start generally with the properties of bulk samples, proceed then to epitaxial layers and nanorods, which have in many respects properties identical to bulk samples and end in several cases with data on quantum wells or nano crystallites. Since it is a didactical review, we present explicitly misconceptions found frequently in submitted or published papers, with the aim to help young scientists entering this field to improve the quality of their submitted manuscripts. We finish with an appendix on quasi two- and one-dimensional exciton cavity polaritons.

Pulse enhanced electron emission (P3e™) arc evaporation and the synthesis of wear resistant Al–Cr–O coatings in corundum structure

Abstract: Pulse enhanced electron emission (P3e (TM)) is a new approach in PVD technology for the deposition of metal oxides. The process is dedicated to the formation of alumina-based and other metallic oxide layers and comprises high current pulse technique for the arc sources. The method allows a deposition of hard alumina-based coatings at substrate temperatures below 600 degrees C. Different oxide layers and layer combinations were prepared with this new technique illustrating the enormous potential for the design of wear resistant coatings. The layers were characterized with respect to hardness, stress, composition, crystal structure, and thermal stability. Solid solutions of (Al1-xCrx)(2)O-3 could be synthesized for a composition range of 0.3 <= 5x

Microstructure of α-alumina thin films deposited at low temperatures on chromia template layers

Abstract: Radio frequency sputtering has been used to deposit α-alumina (α-Al2O3) thin films at substrate temperatures of 280–560 °C. The films are shown to be single phased and hard. Nanoindentation gives values of 306±31 and 27±3 GPa for elastic modulus and hardness, respectively, for a substrate temperature of 280 °C. Growth of the α phase was achieved by in situ predeposition of a chromia template layer. Chromia crystallizes in the same hexagonal structure as α-alumina, with a lattice mismatch of 4.1% in the a- and 4.6% in the c-parameter, and is shown to nucleate readily on the amorphous substrates (silicon with a natural oxide layer). This results in local epitaxy of α-alumina on the chromia layer, as is shown by transmission electron microscopy. The alumina grains are columnar with grain widths increasing from 22±7 to 41±9 nm, as the temperature increases from 280 to 560 °C. This is consistent with a surface diffusion dominated growth mode and suggests that α-alumina deposition at low temperatures is possibl...