Author

# P. K. Das

Bio: P. K. Das is an academic researcher from University of Engineering & Management. The author has contributed to research in topics: Terahertz radiation & Magnetic field. The author has an hindex of 3, co-authored 11 publications receiving 25 citations.

##### Papers

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6 citations

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TL;DR: In this paper, the authors derived the expressions for the gate capacitance in quantum MOSFET devices manufactured from completely different technologically vital nonstandard materials by formulating the 2D electron statistics under very low temperature so that the Fermi function tends to unity.

Abstract: The Heisenberg's scientific theory of quantum science since its beginning has been proved to be instrumental in unlocking varied vital quantum phenomena. In what follows the Heisenberg's scientific theory has been used to derive the expressions for the gate capacitance in Quantum MOSFET
Devices manufactured from completely different technologically vital nonstandard materials by formulating the 2D electron statistics under very low temperature so that the Fermi function tends to unity. For numerical computations we take Cd3As2, the best quality very
high mobility semiconductor and non-linear optical (e.g., CdGeAs2) compounds from which quantum MOSFET devices are made of by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the frame work of Kane's
matrix methodology that successively generates new two dimensional electron energy versus wave vector relation for both low and very large externally applied electric field of force respectively. Under many special conditions, the corresponding statistics and therefore the gate capacitance
for the quantum MOSFETs, whose e–ks equation (e is carrier energy and ks is the 2D wave vector) are defined by various models of III–V semiconducting samples originally derived by Kane create special cases of our extended formalism. It's
been found taking quantum MOSFETs of CdGeAs2, InAs, InSb, Hg1–xCdxTe and In1–xGaxAs yP1–y lattice matched to InP that the gate capacitance at the electrical
quantum limit will exhibit monotonic increasing function with changing field at the surface, the applied voltage at the gate for each of the compounds and therefore the actual results have one to one correspondence with the energy band constants showing an inclination of asymptotic results
at comparatively large values of the independent variables for all the cases. The gradient rates for all curves change from one material to a different material. With decreasing alloy composition, the gate capacitance will increase for each of quantum confined MOSFETs made of various alloy
compounds. For the aim of coherent presentation we've got conjointly planned the periodical Fermi energy at high field of force limits and gate voltage for few quantum confined MOSFETs.

4 citations

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4 citations

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01 Jan 2022TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.

Abstract: In this chapter, we study the influences of size quantization, magnetic quantization, cross-fields configurations and inversion layers on the screening length (SL) in opto-electronic compounds. We note that the screening length oscillates with inverse quantizing magnetic field under magnetic quantization due to SdH effect, exhibits quantum jumps with nano-thickness under size quantization and changes with alloy composition, electron statistics and electric field in various manners for different types of opto-electronic compounds as considered here. All the results in the absence of terahertz frequency have further been plotted to exhibit the mathematical compatibility in this context.

3 citations

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01 Jan 2020TL;DR: In this article, the authors derived the quantum capacitance in quantum wire field effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane's matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation.

Abstract: This chapter explores the quantum capacitance (\( C_{\text{g}} \)) in quantum wire field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. We derive the \( C_{\text{g}} \) under very low temperature so that the Fermi function tends to unity for QWFETs of \( {\text{Cd}}_{3} {\text{As}}_{2} ,{\text{CdGeAs}}_{2} ,{\text{InSb}},{\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}},{\text{InAs}},{\text{GaAs}},{\text{In}}_{1 - x} {\text{Ga}}_{x} {\text{As}}_{y} {\text{P}}_{1 - y} \) IV–VI, stressed materials,\( {\text{Te}},{\text{GaP,PtSb}}_{2} ,{\text{Bi}}_{2} {\text{Te}}_{3} ,{\text{Ge}},{\text{GaSb}} \) and II–V compounds using the appropriate band models. The \( C_{\text{g}} \) becomes the functions of the thickness of the quantum-confined transistors. The \( C_{\text{g}} \) varies with varying film thickness in various quantized steps and saw-tooth manners with different numerical values.

4 citations

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11 Aug 2014

TL;DR: In this article, the ER in NIPI structures of Heavily Doped (HD) Non-Parabolic Semiconductors under external photo-excitation was investigated.

Abstract: The ER in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors.- The ER in NIPI Structures of HD Non-Parabolic Semiconductors.- The ER in Accumulation Layers of HD Non-Parabolic Semiconductors.- Suggestion for Experimental Determinations of 2D and 3D ERs and few Related Applications.- Conclusion and Scope for Future.- The ER for HD III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The ER in HDS Under Magnetic Quantization.- The ER in HDS and their Nano-Structures Under Cross- Fields Configuration.- The ER for HD III-V, Ternary and Quaternary Semiconductors Under Strong Electric Field.- The ER in Super-lattices of HDS Under Magnetic Quantization.

4 citations

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01 Jan 2022TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.

Abstract: In this chapter, we study the influences of size quantization, magnetic quantization, cross-fields configurations and inversion layers on the screening length (SL) in opto-electronic compounds. We note that the screening length oscillates with inverse quantizing magnetic field under magnetic quantization due to SdH effect, exhibits quantum jumps with nano-thickness under size quantization and changes with alloy composition, electron statistics and electric field in various manners for different types of opto-electronic compounds as considered here. All the results in the absence of terahertz frequency have further been plotted to exhibit the mathematical compatibility in this context.

3 citations