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P. K. Das

Bio: P. K. Das is an academic researcher from University of Engineering & Management. The author has contributed to research in topics: Terahertz radiation & Magnetic field. The author has an hindex of 3, co-authored 11 publications receiving 25 citations.

Papers
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Journal ArticleDOI
03 Aug 2020
TL;DR: In this article, the authors studied the electron energy spectrum (EES) in quantum wells (QWs) of heavily doped (HD) nonlinear optical, III-V, II-VI, IV-VI and stressed Kane type compounds.
Abstract: In this paper we study the Electron Energy Spectra (EES) in quantum wells (QWs) of heavily doped (HD) non-linear optical, III-V, II-VI, IV-VI and stressed Kane type compounds by formulating HDEES in each case respectively considering all the specialties of the energy band constants of the said materials. It is noted that the complex EES in many cases in HDS, instead of real one, occurs from the existence of the essential poles in the corresponding EES in the absence of band tails. The EES in QWs is Quantized 2D closed surfaces. As a collateral study we have also investigated the effective mass (EM), Density-of-states (DOS) function and the electron statistics in this context for the purpose of comprehensive understanding. The EM exists in the forbidden zone, which is impossible without the effect of band tailing. In the absence of band tails, the EM in the band gap of semiconductors is infinity. Besides, depending on the type of unperturbed carrier energy spectrum, the new forbidden zone will appear within the normal energy band gap for HDS. Under certain limiting conditions all the results for all the models get simplified the well-known results of an isotropic parabolic energy bands which exhibit the mathematical compatibility of our present generalized analysis.

Cited by
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Book ChapterDOI
01 Jan 2020
TL;DR: In this article, the authors derived the quantum capacitance in quantum wire field effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane's matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation.
Abstract: This chapter explores the quantum capacitance (\( C_{\text{g}} \)) in quantum wire field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. We derive the \( C_{\text{g}} \) under very low temperature so that the Fermi function tends to unity for QWFETs of \( {\text{Cd}}_{3} {\text{As}}_{2} ,{\text{CdGeAs}}_{2} ,{\text{InSb}},{\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}},{\text{InAs}},{\text{GaAs}},{\text{In}}_{1 - x} {\text{Ga}}_{x} {\text{As}}_{y} {\text{P}}_{1 - y} \) IV–VI, stressed materials,\( {\text{Te}},{\text{GaP,PtSb}}_{2} ,{\text{Bi}}_{2} {\text{Te}}_{3} ,{\text{Ge}},{\text{GaSb}} \) and II–V compounds using the appropriate band models. The \( C_{\text{g}} \) becomes the functions of the thickness of the quantum-confined transistors. The \( C_{\text{g}} \) varies with varying film thickness in various quantized steps and saw-tooth manners with different numerical values.

4 citations

Book
11 Aug 2014
TL;DR: In this article, the ER in NIPI structures of Heavily Doped (HD) Non-Parabolic Semiconductors under external photo-excitation was investigated.
Abstract: The ER in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors.- The ER in NIPI Structures of HD Non-Parabolic Semiconductors.- The ER in Accumulation Layers of HD Non-Parabolic Semiconductors.- Suggestion for Experimental Determinations of 2D and 3D ERs and few Related Applications.- Conclusion and Scope for Future.- The ER for HD III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The ER in HDS Under Magnetic Quantization.- The ER in HDS and their Nano-Structures Under Cross- Fields Configuration.- The ER for HD III-V, Ternary and Quaternary Semiconductors Under Strong Electric Field.- The ER in Super-lattices of HDS Under Magnetic Quantization.

4 citations

Book ChapterDOI
01 Jan 2022
TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.
Abstract: In this chapter, we study the influences of size quantization, magnetic quantization, cross-fields configurations and inversion layers on the screening length (SL) in opto-electronic compounds. We note that the screening length oscillates with inverse quantizing magnetic field under magnetic quantization due to SdH effect, exhibits quantum jumps with nano-thickness under size quantization and changes with alloy composition, electron statistics and electric field in various manners for different types of opto-electronic compounds as considered here. All the results in the absence of terahertz frequency have further been plotted to exhibit the mathematical compatibility in this context.

3 citations