Two-dimensional hybrid perovskites are used as absorbers in solar cells. Our first-generation devices containing (PEA)2(MA)2[Pb3I10] (1; PEA=C6H5(CH2)2NH3+, MA=CH3NH3+) show an open-circuit voltage of 1.18 V and a power conversion efficiency of 4.73 %. The layered structure allows for high-quality films to be deposited through spin coating and high-temperature annealing is not required for device fabrication. The 3D perovskite (MA)[PbI3] (2) has recently been identified as a promising absorber for solar cells. However, its instability to moisture requires anhydrous processing and operating conditions. Films of 1 are more moisture resistant than films of 2 and devices containing 1 can be fabricated under ambient humidity levels. The larger bandgap of the 2D structure is also suitable as the higher bandgap absorber in a dual-absorber tandem device. Compared to 2, the layered perovskite structure may offer greater tunability at the molecular level for material optimization.

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A Layered Hybrid Perovskite Solar-Cell Absorber with Enhanced Moisture Stability

Chemical deposition method for metal chalcogenide thin films

This review captures the synthesis, assembly, properties, and applications of copper chalcogenide NCs, which have achieved significant research interest in the last decade due to their compositional and structural versatility. The outstanding functional properties of these materials stems from the relationship between their band structure and defect concentration, including charge carrier concentration and electronic conductivity character, which consequently affects their optoelectronic, optical, and plasmonic properties. This, combined with several metastable crystal phases and stoichiometries and the low energy of formation of defects, makes the reproducible synthesis of these materials, with tunable parameters, remarkable. Further to this, the review captures the progress of the hierarchical assembly of these NCs, which bridges the link between their discrete and collective properties. Their ubiquitous application set has cross-cut energy conversion (photovoltaics, photocatalysis, thermoelectrics), en...

Compound Copper Chalcogenide Nanocrystals

Some aspects of preparation methods and properties of polyaniline blends and composites with organic polymers

https://pubs.rsc.org/en/content/articlepdf/2017/cc/c6cc06475b

Beyond methylammonium lead iodide: prospects for the emergent field of ns2 containing solar absorbers

Thin films of copper sulfide (CuS, 200 nm thick) were deposited over thin films of tin sulfide (SnS, 180 nm thick) by sequential chemical deposition. The layers were heated in nitrogen atmosphere at 350 and 400°C. The grazing incidence X-ray diffraction analysis of these layers established the formation of thin films of ternary composition, Cu 2 SnS 3 and Cu 4 SnS 4 . Optical bandgaps of the films are direct, 0.95 eV for Cu 2 SnS 3 and 1.2 eV for Cu 4 SnS 4 , and the electronic transitions are of the forbidden type in both cases. The films are p-type, with electrical conductivities of 0.5-10 Ω ―1 cm ―1 and hole concentrations of 10 17 ―10 18 cm ―3 . Based on the optical absorption coefficients, the light generated current density (J L ) as a solar cell absorber was evaluated for these materials for air mass 1.5 (1000 W/m 2 ) global solar radiation. For a film thickness of 0.5 μm. Cu 2 SnS 3 and Cu 4 SnS 4 could offer J L of 34 and 27 mA/cm 2 , respectively. Corresponding optical conversion efficiencies of solar energy into electron-hole pairs are 32 and 24%. The built-in potential for CdS/Cu 2 SnS 3 and CdS/Cu 4 SnS 4 junctions would be above 0.9 V and above 1.1 V when ZnO replaces CdS as the window layer.

Cu2SnS3 and Cu4SnS4 Thin Films via Chemical Deposition for Photovoltaic Application

Chemically deposited lead sulfide and bismuth sulfide thin films and Bi2S3/PbS solar cells

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

Optoelectronic properties of chemically deposited Bi2S3 thin films and the photovoltaic performance of Bi2S3/P3OT solar cells

We report an electrically conducting polyaniline–poly(acrylic acid) blend coatings prepared by mixing the emeraldine base (EB) form of polyaniline (PANI) and poly(acrylic acid) (PAA) aqueous solution. The samples show a moderate electrical conductivity σ. If they are immersed in an HCl aqueous solution, the conductivity of the samples is increased by two or three orders of magnitude and their thermal stability is also improved. Optical transmittance spectra show a complete protonation of PANI–PAA blends after immersion in HCl aqueous solution. Fourier transform infrared spectroscopy studies indicate that the better thermal stability of σ could come from the more stable protonated imine nitrogen ions. A low percolation threshold phenomenon is observed in PANI–PAA blends, from a strong interaction between the carboxylic acid groups of PAA and the nitrogen atoms of PANI. © 1998 SCI.

P. K. Nair

Papers

Cu2SnS3 and Cu4SnS4 Thin Films via Chemical Deposition for Photovoltaic Application

Chemically deposited lead sulfide and bismuth sulfide thin films and Bi2S3/PbS solar cells

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

Optoelectronic properties of chemically deposited Bi2S3 thin films and the photovoltaic performance of Bi2S3/P3OT solar cells

Electrically conducting polyaniline-poly(acrylic acid) blends