Author
P. V. Yudin
Other affiliations: École Polytechnique Fédérale de Lausanne, Novosibirsk State University, Russian Academy of Sciences
Bio: P. V. Yudin is an academic researcher from Academy of Sciences of the Czech Republic. The author has contributed to research in topics: Flexoelectricity & Laser cutting. The author has an hindex of 13, co-authored 43 publications receiving 1091 citations. Previous affiliations of P. V. Yudin include École Polytechnique Fédérale de Lausanne & Novosibirsk State University.
Papers
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TL;DR: This review paper presents a critical analysis of the current knowledge on the flexoelectricity in common solids, excluding organic materials and liquid crystals.
Abstract: The flexoelectric effect is the response of electric polarization to a mechanical strain gradient. It can be viewed as a higher-order effect with respect to piezoelectricity, which is the response of polarization to strain itself. However, at the nanoscale, where large strain gradients are expected, the flexoelectric effect becomes appreciable. Besides, in contrast to the piezoelectric effect, flexoelectricity is allowed by symmetry in any material. Due to these qualities flexoelectricity has attracted growing interest during the past decade. Presently, its role in the physics of dielectrics and semiconductors is widely recognized and the effect is viewed as promising for practical applications. On the other hand, the available theoretical and experimental results are rather contradictory, attesting to a limited understanding in the field. This review paper presents a critical analysis of the current knowledge on the flexoelectricity in common solids, excluding organic materials and liquid crystals.
507 citations
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TL;DR: Using piezoresponse force microscopy, the control and manipulation of domain walls in ferroelectric thin films of Pb(Zr,Ti)O₃ with Pt top electrodes with classical Stefan problem is shown.
Abstract: The nucleation and position of multiple domain walls in thin films of Pb(Zr,Ti)O3 can be controlled by voltage pulses applied to a top Pt electrode. Domain walls in ferroic materials have attracted significant interest in recent years, in particular because of the unique properties that can be found in their vicinity1,2,3. However, to fully harness their potential as nanoscale functional entities4,5, it is essential to achieve reliable and precise control of their nucleation, location, number and velocity. Here, using piezoresponse force microscopy, we show the control and manipulation of domain walls in ferroelectric thin films of Pb(Zr,Ti)O3 with Pt top electrodes. This high-level control presents an excellent opportunity to demonstrate the versatility and flexibility of ferroelectric domain walls. Their position can be controlled by the tuning of voltage pulses, and multiple domain walls can be nucleated and handled in a reproducible fashion. The system is accurately described by analogy to the classical Stefan problem6, which has been used previously to describe many diverse systems and is here applied to electric circuits. This study is a step towards the realization of domain wall nanoelectronics utilizing ferroelectric thin films.
134 citations
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30 Nov 2018
TL;DR: The charged domain wall (CDW) is an ultrathin (typically nanosized) interface between two domains; it carries bound charge owing to a change of normal component of spontaneous polarization on crossing the wall as mentioned in this paper.
Abstract: The charged domain wall is an ultrathin (typically nanosized) interface between two domains; it carries bound charge owing to a change of normal component of spontaneous polarization on crossing the wall. In contrast to hetero-interfaces between different materials, charged domain walls (CDWs) can be created, displaced, erased, and recreated again in the bulk of a material. Screening of the bound charge with free carriers is often necessary for stability of CDWs, which can result in giant two-dimensional conductivity along the wall. Usually in nominally insulating ferroelectrics, the concentration of free carriers at the walls can approach metallic values. Thus, CDWs can be viewed as ultrathin reconfigurable strongly conductive sheets embedded into the bulk of an insulating material. This feature is highly attractive for future nanoelectronics. The last decade was marked by a surge of research interest in CDWs. It resulted in numerous breakthroughs in controllable and reproducible fabrication of CDWs in different materials, in investigation of CDW properties and charge compensation mechanisms, in discovery of light-induced effects, and, finally, in detection of giant two-dimensional conductivity. The present review is aiming at a concise presentation of the main physical ideas behind CDWs and a brief overview of the most important theoretical and experimental findings in the field.
118 citations
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TL;DR: The underlying theory towards growth of ultra-fine domain patterns is developed, the theory is substantiated by numerical modelling of practical situations and the gained understanding is implemented using the most widely applied ferroelectric, Pb(Zr,Ti)O3, demonstrating controlled stripes of 10 nm wide domains that extend in one direction along tens of micrometres.
Abstract: In the pursuit of ferroic-based (nano)electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we develop the underlying theory towards growth of ultra-fine domain patterns, substantiate the theory by numerical modelling of practical situations and implement the gained understanding using the most widely applied ferroelectric, Pb(Zr,Ti)O3, demonstrating controlled stripes of 10 nm wide domains that extend in one direction along tens of micrometres. The observed electrical conductivity along these thin domains embedded in the otherwise insulating film confirms their potential for electronic applications.
78 citations
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TL;DR: This work demonstrates nonthermally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic domain-walls of the ubiquitous ferro electric Pb(Zr,Ti)O3 using scanning force microscopy down to a temperature of 4 K.
Abstract: Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nonthermally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic domain-walls of the ubiquitous ferroelectric Pb(Zr,Ti)O3 using scanning force microscopy down to a temperature of 4 K. New walls created at 4 K by pressure exhibit similar robust and intrinsic conductivity. Atomic resolution electron energy-loss spectroscopy confirms the conductivity confinement at the wall. This work provides a new concept in "domain-wall nanoelectronics".
69 citations
Cited by
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TL;DR: A review of recent theoretical and experimental works related to mechanics and mechanical properties of 2D materials can be found in this article, where the authors show that there is a continual growth of interest in the mechanics of other two-dimensional materials beyond graphene.
829 citations
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TL;DR: In this article, the authors focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways, and discuss several exciting possibilities for the development of new devices, including those in electronic, thermal, photovoltaic applications, and transduction sensors and actuators.
Abstract: Ferroelectric materials, because of their robust spontaneous electrical polarization, are widely used in various applications. Recent advances in modelling, synthesis and characterization techniques are spurring unprecedented advances in the study of these materials. In this Review, we focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways. We explore how the study of ferroelectric materials has expanded our understanding of fundamental effects, enabled the discovery of novel phases and physics, and allowed unprecedented control of materials properties. We discuss several exciting possibilities for the development of new devices, including those in electronic, thermal and photovoltaic applications, and transduction sensors and actuators. We conclude with a brief survey of the different directions that the field may expand to over the coming years. Strain engineering can be used to control the properties of thin-film ferroelectric materials, which are promising for electronic, thermal, photovoltaic and transduction applications. This Review addresses fundamental aspects, novel ways to control materials properties and the development of new ferroelectric-based devices.
533 citations
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TL;DR: This review paper presents a critical analysis of the current knowledge on the flexoelectricity in common solids, excluding organic materials and liquid crystals.
Abstract: The flexoelectric effect is the response of electric polarization to a mechanical strain gradient. It can be viewed as a higher-order effect with respect to piezoelectricity, which is the response of polarization to strain itself. However, at the nanoscale, where large strain gradients are expected, the flexoelectric effect becomes appreciable. Besides, in contrast to the piezoelectric effect, flexoelectricity is allowed by symmetry in any material. Due to these qualities flexoelectricity has attracted growing interest during the past decade. Presently, its role in the physics of dielectrics and semiconductors is widely recognized and the effect is viewed as promising for practical applications. On the other hand, the available theoretical and experimental results are rather contradictory, attesting to a limited understanding in the field. This review paper presents a critical analysis of the current knowledge on the flexoelectricity in common solids, excluding organic materials and liquid crystals.
507 citations
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TL;DR: The most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures are summarized, and perspectives on some key issues that require further study are presented in order to realize their practical device applications.
Abstract: Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or magnetic) field, known as a converse (or direct) magnetoelectric effect. It can be exploited to significantly improve the performance of or/and add new functionalities to many existing or emerging devices such as memory devices, tunable microwave devices, sensors, etc. The exciting technological potential, along with the rich physical phenomena at the interface, has sparked intensive research on multiferroic heterostructures for more than a decade. Here, we summarize the most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some key issues that require further study in order to realize their practical device applications.
347 citations
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TL;DR: In this paper, a combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films.
Abstract: We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
285 citations