P.W. Shackle

Bio: P.W. Shackle is an academic researcher. The author has contributed to research in topics: Negative resistance & Backward diode. The author has an hindex of 1, co-authored 1 publications receiving 3 citations.

A New Technique for the Characterization of Microwave Avalanche Diodes

Abstract: Sample theoretical arguments are used to show that at low current densities the negative-resistance properties of a packaged avalanche diode may be represented by only three parameters. These three parameters may be easily measured with the diode in a nonoscillating state. Once these parameters have been measured for a diode, its oscillator performance can be predicted for any well-defined circuit with an accuracy of about 10 percent. An example characterization of a diode is described, and the predicted and experiments performances of this diode when used in an oscillator circuit are then compared.

Design considerations for resonant travelling wave IMPATT oscillators

Abstract: It is shown theoretically that distributed IMPATT structures can be used as resonant lengths of active transmission line if particular care is taken to choose the substrate thickness and resistivity correctly in order to minimize losses In contrast to discrete IMPATT structures, a relatively high substrate resistivity is required for the travelling wave structures Such self-resonant oscillating structures can have an input admittance of the same order as the total depletion layer negative conductance, since the shunting effect of the depletion layer capacitance has automatically been tuned out Thus, for a given value of circuit impedance the distributed structure can be much larger in area, and output power than the corresponding discrete IMPATT It is shown theoretically possible to produce a 450 W pulsed device with an input impedance of −1Ω, although a 100 W device with an input impedance of −4Ω might be a more practicable objective

An analytical and experimental study of injection-locked two-port oscillators

Abstract: A Ku-band IMPATT oscillator with two distinct output power ports was injection-locked alternately at both ports. The transmission locking bandwidth was nearly the same for either port. The lower free running power port had a reflection locking bandwidth that was narrower than its transmission locking one. Just the opposite was found at the other port. A detailed analytical model for two-port injection-locked oscillators is presented, and its results agree quite well with the experiments. A critique of the literature on this topic is included to clear up misconceptions and errors. It is concluded that two-port injection-locked oscillators may prove useful in certain communication systems.