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Paolo Stefano Crovetti

Bio: Paolo Stefano Crovetti is an academic researcher from Polytechnic University of Turin. The author has contributed to research in topics: CMOS & Electromagnetic interference. The author has an hindex of 17, co-authored 80 publications receiving 831 citations. Previous affiliations of Paolo Stefano Crovetti include National University of Singapore & Instituto Politécnico Nacional.


Papers
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Journal ArticleDOI
TL;DR: A new circuit integrated on silicon, which generates temperature-independent bias currents, is described, which shows good thermal performance and in particular, the new second-order temperature-compensated current reference has a mean temperature drift of only 28 ppm//spl deg/C.
Abstract: This paper describes a new circuit integrated on silicon, which generates temperature-independent bias currents. Such a circuit is firstly employed to obtain a current reference with first-order temperature compensation, then it is modified to obtain second-order temperature compensation. The operation principle of the new circuits is described and the relationships between design and technology process parameters are derived. These circuits have been designed by a 0.35 /spl mu/m BiCMOS technology process and the thermal drift of the reference current has been evaluated by computer simulations. They show good thermal performance and in particular, the new second-order temperature-compensated current reference has a mean temperature drift of only 28 ppm//spl deg/C in the temperature range between -30/spl deg/C and 100/spl deg/C.

127 citations

Journal ArticleDOI
TL;DR: In this article, the susceptibility of operational amplifiers to radio frequency interference (RFI) is studied by a new analytical model, in particular, points out the dependence of the RFI induced dc offset voltage shift in amplifiers on design parameters and parasitics, giving both a good insight into the nonlinear mechanisms involved in the phenomenon and a support to integrated circuit designers in order to develop high immunity operational Amplifiers.
Abstract: In this brief, the susceptibility of operational amplifiers to radio frequency interference (RFI) is studied by a new analytical model. The proposed model, in particular, points out the dependence of the RFI induced dc offset voltage shift in operational amplifiers on design parameters and parasitics, giving both a good insight into the nonlinear mechanisms involved in the phenomenon and a support to integrated circuit designers in order to develop high immunity operational amplifiers. The validity of the proposed approach is discussed comparing model predictions with the results of computer simulations and experimental measurements.

76 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present an overview of concepts and design methodologies that emerged in the last decade, aimed to the implementation of analog circuits like Operational Transconductance Amplifiers, Voltage References and Data Converters by digital circuits.
Abstract: A steady trend towards the design of mostly-digital and digital-friendly analog circuits, suitable to integration in mainstream nanoscale CMOS by a highly automated design flow, has been observed in the last years to address the requirements of the emerging Internet of Things (IoT) applications. In this context, this tutorial brief presents an overview of concepts and design methodologies that emerged in the last decade, aimed to the implementation of analog circuits like Operational Transconductance Amplifiers, Voltage References and Data Converters by digital circuits. The current design challenges and application scenarios as well as the future perspectives and opportunities in the field of digital-based analog processing are finally discussed.

50 citations

Journal ArticleDOI
TL;DR: A novel, digital-in-concept approach in the design of analog differential circuits, suitable to very low voltage, aggressively scaled, pure digital integrated circuit technologies, is explored in this paper.
Abstract: A novel, digital-in-concept approach in the design of analog differential circuits, suitable to very low voltage, aggressively scaled, pure digital integrated circuit technologies, is explored in this paper. A differential stage based on the proposed technique is presented and its operation as a voltage comparator and as an operational amplifier in negative feedback configurations is discussed and demonstrated on the basis of theory and simulations. The practical feasibility of the proposed approach is finally verified by experiments carried out on a proof-of-concept prototype.

47 citations

Journal ArticleDOI
TL;DR: The proposed pW-power relaxation oscillator operates over a wide supply voltage range from nominal down to deep sub-threshold and requires only a sub-pF capacitor for Hz-range output frequency and is the only one able to operate from sub-Threshold to nominal voltage.
Abstract: In this paper, a pW-power relaxation oscillator for sensor node applications is presented. The proposed oscillator operates over a wide supply voltage range from nominal down to deep sub-threshold and requires only a sub-pF capacitor for Hz-range output frequency. A true pW-power operation is enabled thanks to the adoption of an architecture leveraging transistor operation in super-cutoff, the elimination of voltage regulation, and current reference. Indeed, the oscillator can be powered directly from highly variable voltage sources (e.g., harvesters and batteries over their whole charge/discharge cycle). This is achieved thanks to the wide supply voltage range, the low voltage sensitivity of the output frequency and the current drawn from the supply. A test chip of the proposed oscillator in 180 nm exhibits a nominal frequency of approximately 4 Hz, a supply voltage range from 1.8 V down to 0.3 V with 10%/V supply sensitivity, 8–18-pA current absorption, and 4%/°C thermal drift from -20 °C to 40 °C at an area of $1600~\mu \mathrm {m}^{2}$ . To the best of the authors’ knowledge, the proposed oscillator is the only one able to operate from sub-threshold to nominal voltage.

42 citations


Cited by
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Journal ArticleDOI
TL;DR: This paper provides a nonexhaustive review of the research work conducted in the field of electromagnetic compatibility at the IC level over the past 40 years to build a tentative roadmap for the EMC of ICs until the year 2020, with a focus on measurement methods and modeling approaches.
Abstract: Throughout the decades of continuous advances in semiconductor technology, from the discrete devices of the late 1950s to today's billon-transistor system-on-chip, there have always been concerns about the ability of components to operate safely in an increasingly disruptive electromagnetic environment. This paper provides a nonexhaustive review of the research work conducted in the field of electromagnetic compatibility (EMC) at the IC level over the past 40 years. It also brings together a collection of information and trends in IC technology, in order to build a tentative roadmap for the EMC of ICs until the year 2020, with a focus on measurement methods and modeling approaches.

289 citations

Proceedings Article
01 Jan 1991
TL;DR: In this paper, a unified derivation and presentation of two forms of dithered quantizer noise based on elementary Fourier techniques is provided, both subtractive and nonsubtractive.
Abstract: A theory of overall quantization noise for nonsubtractive dither was originally developed in unpublished work by J.N. Wright and by T.J. Stockham and subsequently expanded by L.K. Brinton, S.P. Lipshitz, J. Vanderkooy, and R.A. Wannamaker. It is suggested that since these latter results are not as well known as the original results, misunderstanding persists in the literature. New proofs of the properties of quantizer dither, both subtractive and nonsubtractive, are provided. The new proofs are based on elementary Fourier series and Rice's characteristic function method and do not require the use of generalized functions (impulse trains of Dirac delta functions) and sampling theorem arguments. The goal is to provide a unified derivation and presentation of the two forms of dithered quantizer noise based on elementary Fourier techniques. >

210 citations

Journal ArticleDOI
TL;DR: An all-CMOS variable gain amplifier (VGA) that adopts a new approximated exponential equation is presented, characterized by a wide range of gain variation, temperature-independence gain characteristic, low-power consumption, small chip size, and controllable dynamic gain range.
Abstract: An all-CMOS variable gain amplifier (VGA) that adopts a new approximated exponential equation is presented. The proposed VGA is characterized by a wide range of gain variation, temperature-independence gain characteristic, low-power consumption, small chip size, and controllable dynamic gain range. The two-stage VGA is fabricated in 0.18-mum CMOS technology and shows the maximum gain variation of more than 95 dB and a 90-dB linear range with linearity error of less than plusmn 1 dB. The range of gain variation can be controlled from 68 to 95 dB. The P1dB varies from - 48 to - 17 dBm, and the 3-dB bandwidth is from 32 MHz (at maximum gain of 43 dB) to 1.05 GHz (at minimum gain of - 52 dB). The VGA dissipates less than 3.6 mA from 1.8-V supply while occupying 0.4 mm2 of chip area excluding bondpads

146 citations

Journal ArticleDOI
11 Apr 2021
TL;DR: The report investigates BMS safety aspects, battery technology, regulation needs, and safety requirements and performance requirements by focusing mainly on the electric transportation and stationary application, and provides a framework for developing a new standard on BMS.
Abstract: The evolving global landscape for electrical distribution and use created a need area for energy storage systems (ESS), making them among the fastest growing electrical power system products. A key element in any energy storage system is the capability to monitor, control, and optimize performance of an individual or multiple battery modules in an energy storage system and the ability to control the disconnection of the module(s) from the system in the event of abnormal conditions. This management scheme is known as “battery management system (BMS)”, which is one of the essential units in electrical equipment. BMS reacts with external events, as well with as an internal event. It is used to improve the battery performance with proper safety measures within a system. Therefore, a safe BMS is the prerequisite for operating an electrical system. This report analyzes the details of BMS for electric transportation and large-scale (stationary) energy storage. The analysis includes different aspects of BMS covering testing, component, functionalities, topology, operation, architecture, and BMS safety aspects. Additionally, current related standards and codes related to BMS are also reviewed. The report investigates BMS safety aspects, battery technology, regulation needs, and offer recommendations. It further studies current gaps in respect to the safety requirements and performance requirements of BMS by focusing mainly on the electric transportation and stationary application. The report further provides a framework for developing a new standard on BMS, especially on BMS safety and operational risk. In conclusion, four main areas of (1) BMS construction, (2) Operation Parameters, (3) BMS Integration, and (4) Installation for improvement of BMS safety and performance are identified, and detailed recommendations were provided for each area. It is recommended that a technical review of the BMS be performed for transportation electrification and large-scale (stationary) applications. A comprehensive evaluation of the components, architectures, and safety risks applicable to BMS operation is also presented.

117 citations