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Pascal Chevalier

Researcher at STMicroelectronics

Publications -  260
Citations -  4062

Pascal Chevalier is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Blind signal separation & Signal. The author has an hindex of 29, co-authored 252 publications receiving 3813 citations. Previous affiliations of Pascal Chevalier include University of Marne-la-Vallée & Thales Communications.

Papers
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Widely linear estimation with complex data

TL;DR: The purpose of the paper is to calculate the optimum widely linear mean square estimate and to present its main properties and the advantage with respect to the linear procedure is especially analyzed.
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On the virtual array concept for higher order array processing

TL;DR: The purpose of this paper is to provide some important insights into the mechanisms and to both the resolution and the maximal processing capacity, of numerous 2qth order array processing methods by extending the Virtual Array concept to an arbitrary even order for several arrangements of the data statistics and for arrays with space, angular and/or polarization diversity.
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New insights into optimal widely linear array receivers for the demodulation of BPSK, MSK, and GMSK signals corrupted by noncircular interferences-application to SAIC

TL;DR: Insight is gained into the behavior, properties, and performance of optimal WL array receivers, and thus of the SAIC technology, for the demodulation of BPSK, MSK, and GMSK signals corrupted by noncircular interferences.
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High-Resolution Direction Finding From Higher Order Statistics: The $2rm q$ -MUSIC Algorithm

TL;DR: An extension of the MUSIC method to an arbitrary even order 2q (qges1), giving rise to the 2q-MUSIC methods, which show off new important results for direction-finding applications and in particular the best performances of 2-M USIC and 4-M MUSIC methods with q>2, despite their higher variance, when some resolution is required.
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0.13 $\mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

TL;DR: This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/μm2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.