P
Patrick Vogt
Researcher at Technical University of Berlin
Publications - 80
Citations - 5546
Patrick Vogt is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Scanning tunneling microscope & Epitaxy. The author has an hindex of 25, co-authored 73 publications receiving 4929 citations. Previous affiliations of Patrick Vogt include Aix-Marseille University & Chemnitz University of Technology.
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Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon
Patrick Vogt,Patrick Vogt,Paola De Padova,Claudio Quaresima,José Avila,Emmanouil Frantzeskakis,Maria C. Asensio,Andrea Resta,B. Ealet,Guy Le Lay +9 more
TL;DR: Here it is provided compelling evidence, from both structural and electronic properties, for the synthesis of epitaxial silicene sheets on a silver substrate, through the combination of scanning tunneling microscopy and angular-resolved photoemission spectroscopy in conjunction with calculations based on density functional theory.
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Evidence of Dirac fermions in multilayer silicene
Paola De Padova,Patrick Vogt,Andrea Resta,José Avila,Ivy Razado-Colambo,Claudio Quaresima,Carlo Ottaviani,Bruno Olivieri,Thomas Bruhn,Toru Hirahara,Terufusa Shirai,Shuji Hasegawa,Maria C. Asensio,Guy Le Lay +13 more
TL;DR: In this paper, the authors measured a cone-like dispersion at the Brillouin zone center due to band folding in multilayer silicene, and showed that the π* and π states meet at ∼ 0.25ÕeV below the Fermi level.
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Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
Tim Kolbe,Arne Knauer,Chris Chua,Zhihong Yang,Sven Einfeldt,Patrick Vogt,Noble M. Johnson,Markus Weyers,Michael Kneissl +8 more
TL;DR: In this paper, the polarization of the in-plane electroluminescence of (0001) orientated (Al)GaN multiple quantum well light emitting diodes in the ultraviolet-A and ultraviolet-B spectral range was investigated.
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Atomic structures of silicene layers grown on Ag(111): scanning tunneling microscopy and noncontact atomic force microscopy observations.
Andrea Resta,Thomas Leoni,Clemens Barth,Alain Ranguis,Conrad Becker,Thomas Bruhn,Patrick Vogt,Guy Le Lay +7 more
TL;DR: This work presents scanning tunneling microscopy (STM) and non-contact Atomic Force Microscopy (nc-AFM) observations of the major structures of single layer and bi-layer silicene in epitaxy with Ag(111) and gives support to the conjectured possible existence of less stable, ~2% stressed, silicenes domains in the first layer.
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Synthesis and electrical conductivity of multilayer silicene
Patrick Vogt,P. Capiod,Maxime Berthe,Andrea Resta,P. De Padova,Thomas Bruhn,G. Le Lay,Bruno Grandidier +7 more
TL;DR: In this paper, the epitaxial growth and electrical resistance of multilayer silicene on the Ag(111) surface has been investigated and it was shown that the atomic structure of the first layer differs from the next layers and that the adsorption of Si induces the formation of extended Silicene terraces surrounded by step bunching.