We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Microwave photonics, which brings together the worlds of radiofrequency engineering and optoelectronics, has attracted great interest from both the research community and the commercial sector over the past 30 years and is set to have a bright future. The technology makes it possible to have functions in microwave systems that are complex or even not directly possible in the radiofrequency domain and also creates new opportunities for telecommunication networks. Here we introduce the technology to the photonics community and summarize recent research and important applications.

Microwave photonics combines two worlds

Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and fielded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupled with high breakdown voltages, have opened up the possibilities for highly efficient power amplifiers (PAs) exploiting the principles of waveform engineered designs. This paper summarizes the unique advantages of GaN HEMTs compared to other power transistor technologies, with examples of where such features have been exploited. Since RF power densities of GaN HEMTs are many times higher than other technologies, much attention has also been given to thermal management-examples of both commercial “off-the-shelf” packaging as well as custom heat-sinks are described. The very desirable feature of having accurate large-signal models for both discrete transistors and monolithic microwave integrated circuit foundry are emphasized with a number of circuit design examples. GaN HEMT technology has been a major enabler for both very broadband high-PAs and very high-efficiency designs. This paper describes examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, Class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing.

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A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Recent analysis by manufacturers and network operators has shown that current wireless networks are not very energy efficient, particularly the base stations by which terminals access services from the network. In response to this observation the Mobile Virtual Centre of Excellence (VCE) Green Radio project was established in 2009 to establish how significant energy savings may be obtained in future wireless systems. This article discusses the technical background to the project and discusses models of current energy consumption in base station devices. It also describes some of the most promising research directions in reducing the energy consumption of future base stations.

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Green radio: radio techniques to enable energy-efficient wireless networks

The fifth edition of "Numerical Methods for Engineers" continues its tradition of excellence. Instructors love this text because it is a comprehensive text that is easy to teach from. Students love it because it is written for them--with great pedagogy and clear explanations and examples throughout. The text features a broad array of applications, including all engineering disciplines. The revision retains the successful pedagogy of the prior editions. Chapra and Canale's unique approach opens each part of the text with sections called Motivation, Mathematical Background, and Orientation, preparing the student for what is to come in a motivating and engaging manner. Each part closes with an Epilogue containing sections called Trade-Offs, Important Relationships and Formulas, and Advanced Methods and Additional References. Much more than a summary, the Epilogue deepens understanding of what has been learned and provides a peek into more advanced methods. Approximately 80% of the end-of-chapter problems are revised or new to this edition. The expanded breadth of engineering disciplines covered is especially evident in the problems, which now cover such areas as biotechnology and biomedical engineering. Users will find use of software packages, specifically MATLAB and Excel with VBA. This includes material on developing MATLAB m-files and VBA macros.

Numerical methods for engineers

The design and implementation of a class-J mode RF power amplifier is described. The experimental results indicate the class-J mode's potential in achieving high efficiency across extensive bandwidth, while maintaining predistortable levels of linearity. A commercially available 10 W GaN (gallium nitride) high electron mobility transistor device was used in this investigation, together with a combination of high power waveform measurements, active harmonic load-pull and theoretical analysis of the class-J mode. Targeting a working bandwidth of 1.5-2.5 GHz an initial power amplifier (PA) design was based on basic class-J theory and computer-aided design simulation. This realized a 50% bandwidth with measured drain efficiency of 60%-70%. A second PA design iteration has realized near-rated output power of 39 dBm and improved efficiency beyond the original 2.5 GHz target, hence extending efficient PA operation across a bandwidth of 1.4-2.6 GHz, centered at 2 GHz. This second iteration made extensive use of active harmonic load-pull and waveform measurements, and incorporated a novel design methodology for achieving predistortable linearity. The class-J amplifier has been found to be more realizable than conventional class-AB modes, with a better compromise between power and efficiency tradeoffs over a substantial RF bandwidth.

A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA

A novel formulation for the voltage waveforms in high efficiency linear power amplifiers is described. This formulation demonstrates that a constant optimum efficiency and output power can be obtained over a continuum of solutions by utilizing appropriate harmonic reactive impedance terminations. A specific example is confirmed experimentally. This new formulation has some important implications for the possibility of realizing broadband >10% high efficiency linear RF power amplifiers.

On the Continuity of High Efficiency Modes in Linear RF Power Amplifiers

The usual approximate expression for measured f/sub T/=(g/sub m//2 pi (C/sub gs/+C/sub gd/)) is inadequate. At low drain voltages just beyond the knee of the DC I-V curves, where intrinsic f/sub t/ is a maximum for millimeter-wave MODFETs, the high values of C/sub gd/ and G/sub ds/ combine with the high g/sub m/ to make terms involving the source and drain resistance significant. It is shown that these resistances can degrade the measured f/sub T/ of a 0.30- mu m GaAs-AlGaAs MODFET from an intrinsic maximum f/sub T/ value of 73 GHz to a measured maximum value of 59 GHz. The correct extraction of maximum f/sub T/ is essential for determining electron velocity and optimizing low-noise performance. >

Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETs

The extended continuous class-F mode RF power amplifier (PA) is presented for the first time. The introduction and experimental validation of this novel PA mode demonstrates a new design space over a wide band of frequencies. This paper will show that high output power and drain efficiency, equivalent to the class-F mode, can be maintained by varying the reactive components of fundamental and second harmonic impedances in accordance with the new formulation of the voltage waveform. Additionally it will be shown that, by varying both phase and magnitude of the fundamental and second harmonic impedances, a yet wider design space can be achieved, where the efficiency is maintained at a level greater than a certain target value. For the validation of this new theory, an experimental investigation was carried out on GaAs pseudomorphic HEMT devices and demonstrates that high output power and drain efficiency between 75%-83% can be achieved over a wide range of fundamental and second harmonic loads.

On the Extension of the Continuous Class-F Mode Power Amplifier

Utilizing small-signal direct modulation and relative intensity noise measurements, the authors investigate changes in the modulation response, the differential gain delta g/ delta n, the nonlinear gain coefficient in , and the damping factor K, which result from three structural modifications to GaAs-based multiple quantum well lasers: the addition of strain in the quantum wells; and increase in the number of quantum wells; and the addition of p-doping in the quantum wells. These modifications are assessed in terms of their potential for reducing the drive current required to achieve a given modulation bandwidth, for increasing the maximum intrinsic modulation bandwidth of the laser, and for improving the prospects for monolithic layer/transistor integration. It has been possible to simultaneously increase delta g/ delta n and decrease K, yielding very efficient high-speed modulation (20 GHz at a DC bias current of 50 mA) and the first semiconductor lasers to achieve a direct modulation bandwidth of 30 GHz under DC bias. >

Paul J. Tasker

Papers

A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA

On the Continuity of High Efficiency Modes in Linear RF Power Amplifiers

Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETs

On the Extension of the Continuous Class-F Mode Power Amplifier

Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers