Slow light with a remarkably low group velocity is a promising solution for buffering and time-domain processing of optical signals. It also offers the possibility for spatial compression of optical energy and the enhancement of linear and nonlinear optical effects. Photonic-crystal devices are especially attractive for generating slow light, as they are compatible with on-chip integration and room-temperature operation, and can offer wide-bandwidth and dispersion-free propagation. Here the background theory, recent experimental demonstrations and progress towards tunable slow-light structures based on photonic-band engineering are reviewed. Practical issues related to real devices and their applications are also discussed. The unique properties of wide-bandwidth and dispersion-free propagation in photonic-crystal devices have made them a good candidate for slow-light generation. This article gives the background theory of slow light, as well as an overview of recent experimental demonstrations based on photonic-band engineering.

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Slow light in photonic crystals

It is known that light can be slowed down in dispersive materials near resonances. Dramatic reduction of the light group velocity-and even bringing light pulses to a complete halt-has been demonstrated recently in various atomic and solid state systems, where the material absorption is cancelled via quantum optical coherent effects. Exploitation of slow light phenomena has potential for applications ranging from all-optical storage to all-optical switching. Existing schemes, however, are restricted to the narrow frequency range of the material resonance, which limits the operation frequency, maximum data rate and storage capacity. Moreover, the implementation of external lasers, low pressures and/or low temperatures prevents miniaturization and hinders practical applications. Here we experimentally demonstrate an over 300-fold reduction of the group velocity on a silicon chip via an ultra-compact photonic integrated circuit using low-loss silicon photonic crystal waveguides that can support an optical mode with a submicrometre cross-section. In addition, we show fast (approximately 100 ns) and efficient (2 mW electric power) active control of the group velocity by localized heating of the photonic crystal waveguide with an integrated micro-heater.

Active control of slow light on a chip with photonic crystal waveguides

On-chip optical buffers based on waveguide delay lines might have significant implications for the development of optical interconnects in computer systems. Silicon-on-insulator (SOI) submicrometre photonic wire waveguides are used, because they can provide strong light confinement at the diffraction limit, allowing dramatic scaling of device size. Here we report on-chip optical delay lines based on such waveguides that consist of up to 100 microring resonators cascaded in either coupled-resonator or all-pass filter (APF) configurations. On-chip group delays exceeding 500 ps are demonstrated in a device with a footprint below 0.09 mm2. The trade-offs between resonantly enhanced group delay, device size, insertion loss and operational bandwidth are analysed for various delay-line designs. A large fractional group delay exceeding 10 bits is achieved for bit rates as high as 20 Gbps. Measurements of system-level metrics as bit error rates for different bit rates demonstrate error-free operation up to 5 Gbps.

Ultracompact optical buffers on a silicon chip

The quantum-confined Stark effect in single cadmium selenide (CdSe) nanocrystallite quantum dots was studied. The electric field dependence of the single-dot spectrum is characterized by a highly polarizable excited state (∼10 5 cubic angstroms, compared to typical molecular values of order 10 to 100 cubic angstroms), in the presence of randomly oriented local electric fields that change over time. These local fields result in spontaneous spectral diffusion and contribute to ensemble inhomogeneous broadening. Stark shifts of the lowest excited state more than two orders of magnitude larger than the linewidth were observed, suggesting the potential use of these dots in electro-optic modulation devices.

Quantum Confined Stark Effect in Single CdSe Nanocrystallite Quantum Dots

The physical principles behind the phenomenon of slow light in photonic crystal waveguides, as well as their practical limitations, are discussed and put into context This includes the nature of slow light propagation, its bandwidth limitation, the scaling of linear and nonlinear interactions with the slowdown factor as well as issues such as losses, coupling into and the tuning of slow modes Applications in all-optical signal processing appear to be the most promising outcome of the phenomena discussed

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Slow light in photonic crystal waveguides

This paper presents an analysis of optical buffers based on slow-light optical delay lines. The focus of this paper is on slow-light delay lines in which the group velocity is reduced using linear processes, including electromagnetically induced transparency (EIT), population oscillations (POs), and microresonator-based photonic-crystal (PC) filters. We also consider slow-light delay lines in which the group velocity is reduced by an adiabatic process of bandwidth compression. A framework is developed for comparing these techniques and identifying fundamental physical limitations of linear slow-light technologies. It is shown that slow-light delay lines have limited capacity and delay-bandwidth product. In principle, the group velocity in slow-light delay lines can be made to approach zero. But very slow group velocity always comes at the cost of very low bandwidth or throughput. In many applications, miniaturization of the delay line is an important consideration. For all delay-line buffers, the minimum physical size of the buffer for a given number of buffered data bits is ultimately limited by the physical size of each stored bit. We show that in slow-light optical buffers, the minimum achievable size of 1 b is approximately equal to the wavelength of light in the buffer. We also compare the capabilities and limitations of a range of delay-line buffers, investigate the impact of waveguide losses on the buffer capacity, and look at the applicability of slow-light delay lines in a number of applications.

https://web.eecs.umich.edu/~peicheng/people/publications/2005%20-%20Slow-Light%20Optical%20Buffers-%20Capabilities%20and%20Fundamental%20Limitations.pdf

Slow-light optical buffers: capabilities and fundamental limitations

Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals.

A compact variable all-optical buffer using semiconductor quantum dot (QD) structures is proposed and analyzed. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via an electromagnetically induced transparency effect. We present a theoretical investigation of the criteria for achieving slow light in semiconductor QDs. A QD structure in the presence of strain is analyzed with the inclusion of polarization-dependent intersubband dipole selection rules. Experimental methods to synthesize and the measurements of coherent properties in state-of-the-art QDs are surveyed. Slow-light effects in uniform and nonuniform QDs are compared. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.

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Variable optical buffer using slow light in semiconductor nanostructures

We demonstrate slow light via population oscillation in semiconductor quantum-well structures for the first time. A group velocity as low as 9600 m/s is inferred from the experimentally measured dispersive characteristics. The transparency window exhibits a bandwidth as large as 2 GHz.

Pei-Cheng Ku

Papers

Slow-light optical buffers: capabilities and fundamental limitations

Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals.

Variable optical buffer using slow light in semiconductor nanostructures

Slow-Light in Semiconductor Quantum Wells

Slow light in semiconductor quantum wells.