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Electronic Transport In Mesoscopic Systems

We demonstrate first room temperature, and ultrabright single photon emission from a color center in two-dimensional multilayer hexagonal boron nitride. Density Functional Theory calculations indicate that vacancy-related centers are a likely source of the emission.

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Quantum emission from hexagonal boron nitride monolayers

Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV-1) center stands out for its robustness—its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

http://absimage.aps.org/image/MAR11/MWS_MAR11-2010-000614.pdf

Quantum computing with defects

Quantum Information Processing.

We investigate the polarization selection rules of sharp zero-phonon lines (ZPLs) from isolated defects in hexagonal boron nitride (HBN) and compare our findings with the predictions of a Huang-Rhys model involving two electronic states. Our survey, which spans the spectral range $\ensuremath{\sim}550--740\text{ }\text{ }\mathrm{nm}$, reveals that, in disagreement with a two-level model, the absorption and emission dipoles are often misaligned. We relate the dipole misalignment angle ($\mathrm{\ensuremath{\Delta}}\ensuremath{\theta}$) of a ZPL to its energy shift from the excitation energy ($\mathrm{\ensuremath{\Delta}}E$) and find that $\mathrm{\ensuremath{\Delta}}\ensuremath{\theta}\ensuremath{\approx}0\ifmmode^\circ\else\textdegree\fi{}$ when $\mathrm{\ensuremath{\Delta}}E$ corresponds to an allowed HBN phonon frequency and that $0\ifmmode^\circ\else\textdegree\fi{}\ensuremath{\le}\mathrm{\ensuremath{\Delta}}\ensuremath{\theta}\ensuremath{\le}90\ifmmode^\circ\else\textdegree\fi{}$ when $\mathrm{\ensuremath{\Delta}}E$ exceeds the maximum allowed HBN phonon frequency. Consequently, a two-level Huang-Rhys model succeeds at describing excitations mediated by the creation of one optical phonon but fails at describing excitations that require the creation of multiple phonons. We propose that direct excitations requiring the creation of multiple phonons are inefficient due to the low Huang-Rhys factors in HBN and that these ZPLs are instead excited indirectly via an intermediate electronic state. This hypothesis is corroborated by polarization measurements of an individual ZPL excited with two distinct wavelengths that indicate a single ZPL may be excited by multiple mechanisms. These findings provide new insight on the nature of the optical cycle of novel defect-based single-photon sources in HBN.

Optical Absorption and Emission Mechanisms of Single Defects in Hexagonal Boron Nitride

In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green’s function formalism on an effective mass-Hamiltonian. Both p- and n-type DBRTDs exhibit a negative differential resistance effect, which entails the resonant tunnelling through the hole and electron bound states in the graphene quantum well, respectively. The peak-to-valley ratio of approximately 8 (3) for p-type (n-type) DBRTD with quantum well of 5.1 nm (4.3 nm) at a barrier width of 1.3 nm was achieved for zero bandgap graphene at room temperature.

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Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode

Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter’s fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.

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Optical quantum technologies with hexagonal boron nitride single photon sources.

The present work demonstrates the operation and performance of double barrier Graphene Antidot Resonant Tunnel Diode (DBGA-RTD). Non-Equilibrium Green’s Function (NEGF) frame work with tight-binding Hamiltonian and 2-D Poisson equations were solved self-consistently for device study. The interesting feature in this device is that it is an all graphene RTD with band gap engineered graphene antidot tunnel barriers. Another interesting new finding is that it shows negative differential resistance (NDR), which involves the resonant tunneling in the graphene quantum well through both the electron and hole bound states. The Graphene Antidot Lattice (GAL) barriers in this device efficiently improved the Peak to Valley Ratio to approximately 20 even at room temperature. A new fitting model is developed for the number of antidots and their corresponding effective barrier width, which will help in determining effective barrier width of any size of actual antidot geometry.

Resonant tunneling diode based on band gap engineered graphene antidot structures

The zero band gap (E g ) graphene becomes narrow E g semiconductor when graphene is patterned with periodic array of hexagonal shaped antidots, the resultant is the hexagonal Graphene Antidot Lattice (hGAL). Based on the number of atomic chains between antidots, hGALs can be even and odd. The even hGALs (ehGAL) are narrow E g semiconductors and odd hGALs (ohGAL) are semi-metals. The E g opening up by hGALs is not sufficient to operate a realistic switching transistor. Also hGAL transistors realized on Si/SiO 2 substrate are suffering with low carrier mobility and ON-OFF current ratio. In order to achieve a sizable E g with good mobility, AB Bernal stacked hGALs on hexagonal Boron Nitride (hBN), ABA Bernal stacked hBN / hGAL / hBN sandwiched structures and AB misaligned hGAL /hBN structures are reported here for the first time. Using the first principles method the electronic structure calculations are performed. A sizable E g of about 1.04 eV (940+100 meV ) is opened when smallest neck width medium radius ehGAL supported on hBN and about 1.1 eV (940 + 200 meV ) is opened when the same  is sandwiched between hBN layers. A band gap on the order of 71 meV is opened for Bernal stacked ohGAL / hBN and nearly 142 meV opened for hBN / ohGAL /hBN structures for smallest radius and width of nine atomic chains between antidots. Unlike a misaligned graphene on hBN, the misaligned ohGAL/hBN structure shows increased   E g . This study could open up new ways of band gap engineering for graphene based nanostructures. Keywords: Graphene, graphene antidots, hexagonal boron nitride, band structure, band gap engineering

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Effect of Hexagonal Boron Nitride on Energy Band Gap of Graphene Antidot Structures

To make use of exceptional properties of graphene in Field effect Transistor (FETs) for switching devices a band gap must be introduced in order to switch -off the device. Through periodic nano perforations a semi-metallic graphene is converted into semiconducting graphene. To understand the device physics behind the reported experiments theoretical simulations has been carried out. The present paper illustrates nano perforated semiconducting graphene Field effect Transistor (FETs) with micron scale dimensions. The simulation has been performed using drift-diffusion semi-classical and tight-binding based non-equilibrium green’s function (NEGF) methods. The obtained simulation results are compared with previously reported experimental work. The device dimensions considered for simulations and the experiment are similar with neck width, hole periodicity and channel length of 6.3 nm, 16.3 nm and 1 µm respectively. The interesting and new finding in this work is the p-type I-V characteristics for small band g...

Penchalaiah Palla

Papers

Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode

Optical quantum technologies with hexagonal boron nitride single photon sources.

Resonant tunneling diode based on band gap engineered graphene antidot structures

Effect of Hexagonal Boron Nitride on Energy Band Gap of Graphene Antidot Structures

Band gap engineered nano perforated graphene microstructures for field effect transistor