P
Peng-Fei Wang
Researcher at Fudan University
Publications - 12
Citations - 828
Peng-Fei Wang is an academic researcher from Fudan University. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 8, co-authored 12 publications receiving 718 citations. Previous affiliations of Peng-Fei Wang include Technische Universität München.
Papers
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Journal ArticleDOI
Complementary tunneling transistor for low power application
Peng-Fei Wang,K. Hilsenbeck,Th. Nirschl,M. Oswald,Ch. Stepper,M. Weis,Doris Schmitt-Landsiedel,Walter Hansch +7 more
TL;DR: In this paper, the complementary Si-based tunneling transistors are investigated in detail, and it is found that the band-to-band tunneling current is controlled by the gate-tosource voltage.
Journal ArticleDOI
Design of U-Shape Channel Tunnel FETs With SiGe Source Regions
Wang Wei,Peng-Fei Wang,Chun-Min Zhang,Xi Lin,Xiao-Yong Liu,Qing-Qing Sun,Peng Zhou,David Wei Zhang +7 more
TL;DR: In this article, a SiGe-source U-shape-channel tunneling field effect transistor (UTFET) with SiGe source region is investigated by 2D technology computer aided design simulation, and the average value of subthreshold swing (SS) of the optimized UTFET is 58 mV/dec when VGS is varied from 0 to 0.46 V.
Proceedings ArticleDOI
The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes
Th. Nirschl,Peng-Fei Wang,Cory E. Weber,J. Sedlmeir,R. Heinrich,R. Kakoschke,K. Schrufer,J. Holz,Christian Pacha,T. Schulz,Martin Ostermayr,Alexander Olbrich,Georg Georgakos,E. Ruderer,Walter Hansch,Doris Schmitt-Landsiedel +15 more
TL;DR: In this paper, a novel mixed TFET/CMOS (TCMOS) logic family exhibits the advantages with respect to power consumption, and the benefits of the TFET used in analog circuits are outlined.
Journal ArticleDOI
A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation
Peng-Fei Wang,Xi Lin,Lei Liu,Qing-Qing Sun,Peng Zhou,Xiao-Yong Liu,Wei Liu,Yi Gong,David Wei Zhang +8 more
TL;DR: A transistor is reported that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate and can achieve ultra–high-speed writing operations (on time scales of ~1 nanosecond).
Journal ArticleDOI
Simulation of the Esaki-tunneling FET
TL;DR: In this paper, the performance of a MOS-based vertical tunneling transistor in silicon was investigated in order to investigate the impacts of doping profile, gate oxide thickness and drain doping level on the device performance.