Pengfei Yu

TL;DR: In this article, the authors realized all-solution-processed low-voltage OTFTs on a micrometer-thick (1.16 μm) gate dielectric layer of very common material (commercial SU8 photoresist) by reducing the subgap density of states at the channel.

TL;DR: A user-friendly tool was developed to provide an interactive way for convenient parameter extraction and the model is continuous from the off-state and subthreshold regimes to the above-threshold regime, avoiding the convergence problems when being used in SPICE circuit simulations.

TL;DR: In this paper, a fluorine polymer layer is used to protect the organic semiconductor surface from the patterning processes so that the common photoresist can be used, and the ON/OFF-current ratios of the patterned top-gate organic thin-film transistors are improved by about one order of magnitude compared with that of unpatterned devices.

TL;DR: In this article, the performance of two types of low-voltage organic thin-film transistors (OTFTs) as switches in active-matrix backplanes is compared.

TL;DR: In this paper, the performance of low voltage organic thinfilm transistors (OTFTs) using two different approaches including enlarging the gate dielectric capacitance with large permittivity (high-k) gate Dielectric material and reducing the sub-gap density of states (DOS) at the channel were compared by device and circuit hybrid simulations.