Noble metals enhanced catalytic activity of anatase TiO2 for hydrogen evolution reaction

The novel glasses with compositions PbO Na2B4O7 CaO Al2O3 SiO2 glasses are prepared by the melt quenching technique. The radiation shielding and mechanical properties of the prepared glasses are presented and discussed in details. The mass attenuation coefficient (μ/ρ) which is the basic parameter in the evaluation of the radiation interaction with shielding materials was calculated according to MCNPX code, and the results were compared with those obtained by XCOM program. The simulation results match most of the XCOM data very well. Additionally, the results revealed that both (μ/ρ) and the effective atomic number (Zeff) of the prepared glasses increase with increasing lead monoxide from 0 to 50  mol. %. Also, the difference of HVL values of the prepared glass samples and that for the pure lead decrease when the concentration of lead monoxide increases. It is found that the removal cross-sections, ΣR values for the prepared glasses lie within the range 0.1006–0.1215 cm−1.

Radiation shielding features using MCNPX code and mechanical properties of the PbONa2OB2O3CaOAl2O3SiO2 glass systems

Theoretical discovery of high capacity hydrogen storage metal tetrahydrides

Noble metal interlayer-doping enhances the catalytic activity of 2H–MoS2 from first-principles investigations

Structural, electronic, mechanical and thermodynamic properties of Cr–Si binary silicides from first-principles investigations

Structure, mechanical, electronic and thermodynamic properties of Mo5Si3 from first-principles calculations

Influence of alloying elements on the structural stability, elastic, hardness and thermodynamic properties of Mo5SiB2 from first-principles calculations

Ping Wang

Papers

Structure, mechanical, electronic and thermodynamic properties of Mo5Si3 from first-principles calculations

Influence of alloying elements on the structural stability, elastic, hardness and thermodynamic properties of Mo5SiB2 from first-principles calculations

Ge-vacancy improved the optical and electronic properties of GeAs2 semiconductor