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Pranav M Tripathi

Bio: Pranav M Tripathi is an academic researcher from Delhi Technological University. The author has contributed to research in topics: MOSFET & Transconductance. The author has an hindex of 1, co-authored 4 publications receiving 5 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, a gallium nitride buffered trench gate (GaN-BTG) metal oxide semiconductor field effect transistor (MOSFET) for high-speed and low-power applications is presented.
Abstract: This study presents numerical simulation of a novel gallium nitride buffered trench gate (GaN-BTG) metal oxide semiconductor field effect transistor (MOSFET) for high-speed and low-power applications. The electrical characteristics of GaN-BTG-MOSFET are compared with BTG MOSFET and conventional trench gate MOSFET. A comparative study of different performance factors such as electric field, electron velocity, threshold voltage (V th), electron mobility, and sub-threshold swing (SS) of these devices has been performed. Results reveal a 43.85% improvement in SS and 9.83% decrement in V th for GaN-BTG-MOSFET. Furthermore, the frequency analysis has been performed in terms of scattering (S) parameters, cut-off frequency (f T) and maximum oscillator frequency (f MAX) to show how the device is also suitable for radio frequency applications. Furthermore, the study of parametric variation of GaN-BTG-MOSFET with the change in channel length, oxide thickness (t ox), and doping concentration has also been presented. Results show that GaN-BTG-MOSFET can act as a promising structure for further scaling down of the trenched MOSFET and assures better performance for sub-20 nm trenched MOSFET.

8 citations

Proceedings ArticleDOI
01 Oct 2019
TL;DR: In this paper, a novel GaN (Gallium Nitride) SOI (Silicon-on-Insulator) FinFET (GaN-SOI Fin-FET) was proposed using TCAD.
Abstract: A novel GaN (Gallium Nitride) SOI (Silicon-on-Insulator) FinFET (GaN-SOI FinFET) is proposed in this work using TCAD. All the results of the proposed device with 8 nm gate length are compared with bulk GaN FinFET and conventional silicon FinFET. At ultra-low voltage (V DS = 0.1 V) power supply, GaN-SOI FinFET device enhances (by four times) ON-current (I ON ) thereby subthreshold slope, transconductance, surface potential, and switching performance of the device. Thus, the enhanced electrical performance of GaN-SOI FinFET improves the device efficiency and makes it suitable candidate for highperformance CMOS circuits with ultra-low power.

1 citations

Proceedings ArticleDOI
01 Apr 2020
TL;DR: In this paper, thermal reliability of GaN-BTG-MOSFET for application in Integrated Circuits (ICs) at high temperatures (300K to 600 K) was presented.
Abstract: This paper presents, thermal reliability of GaN-BTG-MOSFET (Buffer Trenched Gate MOSFET) for application in Integrated Circuits (ICs) at high temperatures (300K to 600 K).A thorough comparative analysis of electrical characteristics such as transconductance, transfer characteristics, leakage current and the electric field of the designed devices have been performed using the TCAD Atlas tool. A detailed discussion is presented on the thermal stability of the device at high temperatures (300-600K). Paper also presents the performance factors such as On-Resistance (R on ), leakage current and threshold voltage (V th ). Results suggest that the introduction of GaN in place of silicon in a trenched gate structure not only improves the device's performance at room temperature (300K) but also enhances the thermal stability of the device at high temperatures. The performance of GaN-BTG-MOSFET at high temperature when compared to CTG (Conventional trenched Gate MOSFET) MOSFET suggests that it can be used in ICs and shows better thermal stability than silicon-based devices.

1 citations

Proceedings ArticleDOI
19 May 2021
TL;DR: In this article, the authors presented a numerical simulation of novel Indium Nitride and Gallium Phosphide based GaN-BTG (Buffer Trenched Gate) MOSFET.
Abstract: The paper presents a numerical simulation of novel Indium Nitride and Gallium Phosphide based GaN-BTG (Buffer Trenched Gate) MOSFET. The electrical characteristics such as Transfer characteristics, Transconductance, Electron mobility of InN-GaN-BTG-MOSFET and GaP-GaN-BTG-MOSFET are exhaustively analyzed using the Atlas TCAD tool. A comprehensive study is presented comparing the InN-GaN-BTG-MOSFET with GaN-BTG and GaP-GaN-BTG MOSFETs in terms of their performance characteristics. An improvement of 60.48% in SS and an increment of 47.16% in the electric field is observed which is because of the appliance of GaP and InN in the GaN-BTG structure. InN-GaN-BTG-MOSFET proves to be a promising structure to obtain enhanced performance for sub-20nm transistors and may be used for further scaling up the device.

Cited by
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Journal ArticleDOI
TL;DR: In this paper, the suppressed distortion and improved analog/linearity performance metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel MOSFET were investigated.
Abstract: This work investigates the suppressed distortion and improved analog/linearity performance metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel MOSFET (GaNNW/Al2O3 MOSFET) at room temperature (300 K). The results show high switching ratio (≈ 109) with low subthreshold swing (67 mV/decade), high QF value (4.1 μS-decade/mV) of GaNNW/Al2O3-MOSFET in comparison to GaNNW/SiO2 and SiNW MOSFET for Vds = 0.4 V due to the lower permittivity of GaN and more effective mass of the electron. Furthermore, linearity and distortion performance is also examined by numerically calculating transconductance and its higher derivatives (gm2 and gm3); voltage and current intercept point (VIP2, VIP3 and IIP3); 1-dB compression point; Harmonics distortions (HD2 and HD3) and IMD3. All these parameters show high linearity and low distortion at zero crossover point (where gm3 = 0) in GaNNW/Al2O3 MOSFET. Thus, GaNNW MOSFET can be considered as a promising candidate for low power high-performance applications. In addition, effect of ambient temperature (250 K–450 K) on the performance of GaNNW/Al2O3 is studied and discussed in terms of the above mentioned metrics. It is very well exhibited that SS, Ion, Vth, and QF improved when the temperature is lowered which makes it suitable for low-temperature environments. But, linearity degrades as the temperature lowers down.

8 citations

Journal ArticleDOI
TL;DR: In this paper , a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2.
Abstract: In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2. High-quality and stable MOS interface is obtained through two-step process, including simple acid cleaning and a following (NH4)2S passivation. Based on the calibration with experiment, the simulation results of physical model are consistent well with the experiment data in transfer, output, and breakdown characteristic curves, which demonstrate the validity of the simulation data obtained by Silvaco technology computer aided design (Silvaco TCAD). The mechanisms of on-state and breakdown are thoroughly studied using Silvaco TCAD physical model. The device parameters, including n--GaN drift layer, p-GaN channel layer and gate dielectric layer, are systematically designed for optimization. This comprehensive analysis and optimization on the vertical GaN-based trench MOSFETs provide significant guide for vertical GaN-based high power applications.

7 citations

Proceedings ArticleDOI
29 Apr 2021
TL;DR: In this paper, a comparative study of GaN-BTG MOSFETs with BTG-MOS-FET and CTG-mOSFet was performed using TCAD.
Abstract: This paper presents the comparative study of a proposed device GaN-BTG MOSFET with BTG-MOSFET and CTG-MOSFET in terms of electrical characteristics, analog and linearity parameters by performing simulation using TCAD. The GaN-BTG MOSFET is obtained by modifying a conventional trenched gate structure where GaN is used as the replacement of silicon substrate, having a stacking of silicon dioxide (SiO 2 ) and hafnium dioxide (HfO 2 ) at the gate terminal. The comparative study shows that the GaN-BTG MOSFET is better in terms of transfer and output characteristics and transconductance whereas analog and low-power high-linearity parameters need improvement.
Proceedings ArticleDOI
19 May 2021
TL;DR: In this article, a detailed study of GaN-BTG MOSFET where GaN is used as a substrate in lieu of silicon and at the gate terminal, a stacking of silicon dioxide (SiO2) and hafnium dioxide (HfO2), is placed in a conventional trenched gate structure to obtain the proposed device.
Abstract: The detailed study of GaN-BTG MOSFET where GaN is used as a substrate in lieu of silicon and at the gate terminal, a stacking of silicon dioxide (SiO2) and hafnium dioxide (HfO2) is placed in a conventional trenched gate structure to obtain the proposed device. This paper addresses the comparative study of electrical characteristics such as transfer characteristics, output characteristics, transconductance, higher-order transconductance, transconductance generation factor, output conductance has been obtained for the proposed device by performing simulation using TCAD. The results validate the superiority of the proposed device in terms of performance.