P
Prashanth Kumar Manda
Researcher at Indian Institute of Technology Madras
Publications - 9
Citations - 45
Prashanth Kumar Manda is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Semiconductor & Capacitance. The author has an hindex of 3, co-authored 9 publications receiving 25 citations. Previous affiliations of Prashanth Kumar Manda include Micron Technology.
Papers
More filters
Journal ArticleDOI
Extraction of the Built-in Potential for Organic Solar Cells From Current–Voltage Characteristics
TL;DR: In this paper, a physics-based model and an experimental method were proposed to extract the built-in potential of an organic diode and solar cell from current density-voltage characteristics.
Journal ArticleDOI
Scaling of contact metal induced hysteresis in solution processed organic thin film transistors
TL;DR: In this paper, the correlation between the contact effect and hysteresis was demonstrated by comparing gold contact and silver contact devices with having low and high contact resistances respectively, and a simplistic analysis based on charge trapping in the vicinity of the source terminal was proposed to explain the scaling behavior of hystresis with channel length.
Journal ArticleDOI
Modeling of Organic Metal–Insulator– Semiconductor Capacitor
Prashanth Kumar Manda,Logesh Karunakaran,Sandeep Krishna Thirumala,Anjan Chakravorty,Soumya Dutta +4 more
TL;DR: In this article, the operation principle of an organic metal-insulator-semiconductor (MIS) capacitor where the organic semiconductor is undoped is presented, and a physics-based model is developed to derive the charge concentration, surface potential, and the capacitance of the organic MIS capacitor.
Journal ArticleDOI
Study of exciton-polaron interaction in pentacene field effect transistors using high sensitive photocurrent measurements
Haripriya Kesavan,Subhamoy Sahoo,Sanjoy Jena,Prashanth Kumar Manda,Amogh Kumar Baranwal,Soumya Dutta,Jayeeta Bhattacharyya,Debdutta Ray +7 more
TL;DR: In this article, the enhancement of conduction in the organic field effect transistors on light illumination is studied using phase sensitive photocurrent measurements on pentacene FET transistors, and two models are proposed on the exciton dynamics in the presence of gate induced polarons in the transistor channel.
Journal ArticleDOI
Modeling the frequency response of organic metal-insulator-semiconductor capacitors
TL;DR: In this article, the authors show that the capacitance dispersion with respect to frequency and temperature in organic MIS capacitor devices is an inherent property, which arises due to the low conductivity of the semiconductor along with Schottky type contact at semiconductor-metal junction.