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Projnan Chattopadhyay

Jawaharlal Nehru Centre for Advanced Scientific Research
Bio: Projnan Chattopadhyay is an academic researcher from Jawaharlal Nehru Centre for Advanced Scientific Research. The author has contributed to research in topics: Voltage & Solar cell. The author has an hindex of 1, co-authored 1 publications receiving 2 citations.
Topics: Voltage, Solar cell, Open-circuit voltage
Papers
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Journal Article•DOI•
Effect of ageing on the open-circuit voltage of MIS-solar cell

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Projnan Chattopadhyay1•
Jawaharlal Nehru Centre for Advanced Scientific Research1
01 Apr 1998-Applied Surface Science
TL;DR: In this paper, the effect of ageing on the open-circuit voltage of the MIS-solar cell is addressed and it is shown that the open circuit voltage may increase substantially with ageing time for Al-SiO2-nSi solar cells.

2 citations

Cited by
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Journal Article•DOI•
Admittance of metal–insulator–semiconductor tunnel contacts in the presence of donor–acceptor mixed interface states and interface reaction

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P. Chattopadhyay
01 Jan 2001-Journal of Applied Physics
TL;DR: In this article, the admittance of a metal-insulator-semiconductor tunnel contact is evaluated considering the presence of donor-acceptor mixed interface states and chemical reaction in the interfacial oxide layer.
Abstract: The admittance of a metal–insulator–semiconductor tunnel contact is evaluated considering the presence of donor–acceptor mixed interface states and chemical reaction in the interfacial oxide layer. Both the voltage and frequency behavior of the device has been studied. It has been found that, due to interface reaction, the current, conductance, and capacitance of the device drift considerably with time yielding an aging effect. Further, it is revealed that the dependence of the conductance and capacitance on the aging time stem rapidly from changing time constants of the interface states with aging time. The results are discussed with special reference to well known admittance spectroscopy used for the characterization of interface states.

5 citations

Journal Article•DOI•
Current–voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination

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Chia Lung Tsai1, Cheng Lung Tsai1, Guan Ru He1, Ting Hong Su1, Chang Feng You1, Yow-Jon Lin1 •
National Changhua University of Education1
01 Jul 2011-Solid-state Electronics
TL;DR: In this paper, the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si-Schottky diodes with and without light illumination was examined.
Abstract: In this study, the current–voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm 2 ) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.

4 citations