scispace - formally typeset
Search or ask a question
Author

Q.-Y Tong

Bio: Q.-Y Tong is an academic researcher. The author has contributed to research in topics: Wire bonding & Wafer. The author has an hindex of 1, co-authored 1 publications receiving 600 citations.

Papers
More filters
Book
23 Nov 1998
TL;DR: In this paper, the authors present the basic interactions between flat surfaces, including the influence of Particles, Surface Steps, and Cavities, and thermal treatment of Bonded Wafer Pairs.
Abstract: Basics of Interactions Between Flat Surfaces. Influence of Particles, Surface Steps, and Cavities. Surface Preparation and Room-Temperature Wafer Bonding. Thermal Treatment of Bonded Wafer Pairs. Thinning Procedures. Electrical Properties of Bonding Interfaces. Stresses in Bonded Wafers. Bonding of Dissimilar Materials. Bonding of Structured Wafers. Mainstream Applications. Emerging and Future Applications. Index.

602 citations


Cited by
More filters
BookDOI
27 Sep 2001
TL;DR: In this paper, the authors present a detailed overview of the history of the field of flow simulation for MEMS and discuss the current state-of-the-art in this field.
Abstract: Part I: Background and Fundamentals Introduction, Mohamed Gad-el-Hak, University of Notre Dame Scaling of Micromechanical Devices, William Trimmer, Standard MEMS, Inc., and Robert H. Stroud, Aerospace Corporation Mechanical Properties of MEMS Materials, William N. Sharpe, Jr., Johns Hopkins University Flow Physics, Mohamed Gad-el-Hak, University of Notre Dame Integrated Simulation for MEMS: Coupling Flow-Structure-Thermal-Electrical Domains, Robert M. Kirby and George Em Karniadakis, Brown University, and Oleg Mikulchenko and Kartikeya Mayaram, Oregon State University Liquid Flows in Microchannels, Kendra V. Sharp and Ronald J. Adrian, University of Illinois at Urbana-Champaign, Juan G. Santiago and Joshua I. Molho, Stanford University Burnett Simulations of Flows in Microdevices, Ramesh K. Agarwal and Keon-Young Yun, Wichita State University Molecular-Based Microfluidic Simulation Models, Ali Beskok, Texas A&M University Lubrication in MEMS, Kenneth S. Breuer, Brown University Physics of Thin Liquid Films, Alexander Oron, Technion, Israel Bubble/Drop Transport in Microchannels, Hsueh-Chia Chang, University of Notre Dame Fundamentals of Control Theory, Bill Goodwine, University of Notre Dame Model-Based Flow Control for Distributed Architectures, Thomas R. Bewley, University of California, San Diego Soft Computing in Control, Mihir Sen and Bill Goodwine, University of Notre Dame Part II: Design and Fabrication Materials for Microelectromechanical Systems Christian A. Zorman and Mehran Mehregany, Case Western Reserve University MEMS Fabrication, Marc J. Madou, Nanogen, Inc. LIGA and Other Replication Techniques, Marc J. Madou, Nanogen, Inc. X-Ray-Based Fabrication, Todd Christenson, Sandia National Laboratories Electrochemical Fabrication (EFAB), Adam L. Cohen, MEMGen Corporation Fabrication and Characterization of Single-Crystal Silicon Carbide MEMS, Robert S. Okojie, NASA Glenn Research Center Deep Reactive Ion Etching for Bulk Micromachining of Silicon Carbide, Glenn M. Beheim, NASA Glenn Research Center Microfabricated Chemical Sensors for Aerospace Applications, Gary W. Hunter, NASA Glenn Research Center, Chung-Chiun Liu, Case Western Reserve University, and Darby B. Makel, Makel Engineering, Inc. Packaging of Harsh-Environment MEMS Devices, Liang-Yu Chen and Jih-Fen Lei, NASA Glenn Research Center Part III: Applications of MEMS Inertial Sensors, Paul L. Bergstrom, Michigan Technological University, and Gary G. Li, OMM, Inc. Micromachined Pressure Sensors, Jae-Sung Park, Chester Wilson, and Yogesh B. Gianchandani, University of Wisconsin-Madison Sensors and Actuators for Turbulent Flows. Lennart Loefdahl, Chalmers University of Technology, and Mohamed Gad-el-Hak, University of Notre Dame Surface-Micromachined Mechanisms, Andrew D. Oliver and David W. Plummer, Sandia National Laboratories Microrobotics Thorbjoern Ebefors and Goeran Stemme, Royal Institute of Technology, Sweden Microscale Vacuum Pumps, E. Phillip Muntz, University of Southern California, and Stephen E. Vargo, SiWave, Inc. Microdroplet Generators. Fan-Gang Tseng, National Tsing Hua University, Taiwan Micro Heat Pipes and Micro Heat Spreaders, G. P. "Bud" Peterson, Rensselaer Polytechnic Institute Microchannel Heat Sinks, Yitshak Zohar, Hong Kong University of Science and Technology Flow Control, Mohamed Gad-el-Hak, University of Notre Dame) Part IV: The Future Reactive Control for Skin-Friction Reduction, Haecheon Choi, Seoul National University Towards MEMS Autonomous Control of Free-Shear Flows, Ahmed Naguib, Michigan State University Fabrication Technologies for Nanoelectromechanical Systems, Gary H. Bernstein, Holly V. Goodson, and Gregory L. Snider, University of Notre Dame Index

951 citations

Journal ArticleDOI
TL;DR: In this article, the authors discuss methods of forming silicon-on-insulator (SOI) wafers, their physical properties, and the latest improvements in controlling the structure parameters.
Abstract: Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/dielectric structures that provide new functionality for advanced Si devices. After more than three decades of materials research and device studies, SOI wafers have entered into the mainstream of semiconductor electronics. SOI technology offers significant advantages in design, fabrication, and performance of many semiconductor circuits. It also improves prospects for extending Si devices into the nanometer region (<10 nm channel length). In this article, we discuss methods of forming SOI wafers, their physical properties, and the latest improvements in controlling the structure parameters. We also describe devices that take advantage of SOI, and consider their electrical characteristics.

772 citations

Journal ArticleDOI
15 Dec 2006-Science
TL;DR: Repeated application of an additive, transfer printing process that uses soft stamps with these substrates as donors, followed by device and interconnect formation, yields high-performance heterogeneously integrated electronics that incorporate any combination of semiconductor nanomaterials on rigid or flexible device substrates.
Abstract: We developed a simple approach to combine broad classes of dissimilar materials into heterogeneously integrated electronic systems with two- or three-dimensional layouts. The process begins with the synthesis of different semiconductor nanomaterials, such as single-walled carbon nanotubes and single-crystal micro- and nanoscale wires and ribbons of gallium nitride, silicon, and gallium arsenide on separate substrates. Repeated application of an additive, transfer printing process that uses soft stamps with these substrates as donors, followed by device and interconnect formation, yields high-performance heterogeneously integrated electronics that incorporate any combination of semiconductor nanomaterials on rigid or flexible device substrates. This versatile methodology can produce a wide range of unusual electronic systems that would be impossible to achieve with other techniques.

715 citations

Journal ArticleDOI
TL;DR: In this article, the status of microelectromechanical systems (MEMS) is reviewed with particular emphasis on materials issues therein, and the potential impact of materials solutions is discussed.

618 citations

Patent
02 Jun 2005
TL;DR: In this article, the authors present methods and devices for fabricating printable semiconductor elements and assembling them onto substrate surfaces, which are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on polymeric materials.
Abstract: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

558 citations